TECHNICAL DATA NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/495 Devices Qualified Level JAN JANTX JANTXV 2N5794 2N5794U 2N5793 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C Symbol Value Units VCEO VCBO VEBO IC 40 75 6.0 600 Vdc Vdc Vdc mAdc PT Top, Tstg One Total Section(1) Device(2) 0.5 0.6 -65 to +200 W C 0 6 PIN SURFACE MOUNT* *See MILPRF19500/495 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics TO-78* Symbol Min. V(BR)CEO 40 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 75 Vdc VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 4.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICBO 10 10 µAdc ηAdc IEBO 10 10 µAdc ηAdc 42203 Page 1 of 2 2N5793, 2N5794 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 300 mAdc, IB = 30 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 300 mAdc, IB = 30 mAdc 2N5793 hFE 2N5794 2N5794U hFE 20 25 35 40 25 20 35 50 75 100 40 50 VCE(sat) 120 300 0.3 0.9 Vdc Vdc VBE(sat) 0.6 1.2 1.8 hfe 2.0 10 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF Cibo 33 pF t on 45 ηs t off 310 ηs SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 2 of 2