TM ECO-PAC 2 IGBT Module PSHI 100/06* H-Bridge Configuration IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 K10 K13 H13 A1 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC *NTC optional Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 600 V ± 20 V 69 48 A A 100 VCES A 10 µs 208 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff PSHI 100/06* P18 2.3 2.8 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) Features • • • • • • • • • • • • NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Isolation voltage 3000 V∼ UL registered, E 148688 Advantages • • • space and weight savings reduced protection circuits package designed for wave soldering High power density Easy to mount with two screws 2.8 V V 6.5 V 0.8 4.4 mA mA • • 100 nA Typical Applications 50 55 300 30 1.8 1.4 ns ns ns ns mJ mJ 2.8 nF 1.2 0.6 K/W K/W • • motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 100/06 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 40 A; TVJ = 25°C TVJ = 125°C IRM trr IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 15 70 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 1.3 K/W K/W 56 35 A A Package style and outline Dimensions in mm (1mm = 0.0394“) Characteristic Values min. typ. max. 2.32 1.58 2.59 V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 455 470 3474 485 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 100/06 150 IC 150 VGE= 17 V 15 V 13 V A 120 A 120 IC 90 VGE= 17 V 15 V 13 V 90 11V 60 TVJ = 25°C TVJ = 125°C 9V 30 0 1 2 3 4 5 V 9V 30 42T60 0 11V 60 0 6 42T60 0 1 2 3 4 VCE 5 V 6 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 90 A 75 A 120 IF VCE = 20 V IC 60 90 45 TVJ = 125°C 60 TVJ = 125°C TVJ = 25°C 30 0 TVJ = 25°C 30 15 42T60 4 6 8 10 12 42T60 0 0,0 14 V 16 0,5 1,0 1,5 2,0 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V 40 A 15 VGE VCE = 300 V IC = 50 A 10 120 ns trr IRM 90 30 TVJ = 125°C VR = 300 V IF = 30 A 20 5 60 30 10 IRM 0 42T60 0 40 80 120 QG Fig. 5 Typ. turn on gate charge nC 160 0 42T60 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 trr PSHI 100/06 10,0 mJ Eon ns 7,5 75 tr 5,0 4 100 td(on) 400 mJ t 3 Eoff RG = 22 Ω TVJ = 125°C 0,0 Eon 42T60 0 40 A 80 50 2 25 1 0 0 td(off) 120 RG = 22 Ω TVJ = 125°C mJ 0 40 80 IC 3 600 ns 60 t ns Eoff Eoff 2 VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C 42T60 0 10 20 30 40 40 1 20 0 50 Ω 60 VCE = 300 V VGE = ±15 V IC = 50 A TVJ = 125°C 200 tf 0 10 20 30 RG 42T60 0 50 Ω 60 40 RG Fig. 9 Typ. turn on energy and switching ICM 400 td(off) tr 1 0 120 A mJ 3 2 42T60 Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 80 Eon Eon 100 tf Fig. 7 Typ. turn on energy and switching td(on) 200 VCE = 300 V VGE = ±15 V IC 4 300 t VCE = 300 V VGE = ±15 V 2,5 ns Eoff Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 120 10 A K/W 90 ZthJC RG = 22 Ω TVJ = 125°C diode 1 IGBT 0,1 60 0,01 30 0 single pulse 0,001 42T60 0 100 200 300 400 500 600 700 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area VID...75-06P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 t