IGBT Module PSII 100/06* IC80 = VCES = VCE(sat)typ.= Short Circuit SOA Capability Square RBSOA 80 A 600 V 2.3 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 120 80 A A VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 200 360 A V 10 µs 379 W VCE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions (TVJ VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff typical picture, for pin configuration see outline drawing V6 Characteristic Values = 25°C, unless otherwise specified) min. typ. max. IC = 130 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1.5 mA; VGE = VCE VCE = VCES; 2.3 2.6 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 80 A VGE = 15/0 V; RG = 2.2 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 2.9 V V 6.5 V 1.2 7.5 mA mA 400 nA 25 11 150 30 0.8 2.3 ns ns ns ns mJ mJ 4.2 nF 0.66 0.33 K/W K/W *NTC optional Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 130 80 Symbol Conditions Characteristic Values min. typ. max. VF IF = 80 A; TVJ = 25°C TVJ = 125°C 1.85 1.40 IRM trr IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 28 100 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 0.66 K/W K/W A A 2.06 V V t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop pr dev Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 Module Symbol TVJ Tstg Conditions 5.0 3375 5.25 kΩ K Maximum Ratings -40...+125 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M5) a Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 86 g Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20