IGBT Module IC80 = VCES = VCE(sat)typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline drawing V6 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Symbol Conditions VCES TVJ = 25°C to 150°C VGES V3 Maximum Ratings 600 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 42.5 29 A A ICM VCEK VGE = ±15 V; RG = 33 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 60 VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 130 W Symbol Conditions (TVJ VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.7 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Characteristic Values = 25°C, unless otherwise specified) min. typ. max. 2.4 2.9 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 2.9 V V 6.5 V 0.6 1.7 mA mA 100 nA 50 50 270 40 1.4 1.0 ns ns ns ns mJ mJ 16 nF 1.92 0.96 K/W K/W *NTC optional Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 30 A; TVJ = 25°C TVJ = 125°C IRM trr IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V RthJC RthJH Maximum Ratings 30 19 A A Characteristic Values min. typ. max. 2.57 1.8 2.84 V V t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop pr dev with heatsink compound (0.42 K/m.K; 50 µm) 7 50 A ns 4.6 2.3 K/W K/W Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 Module Symbol TVJ Tstg Conditions 5.0 3375 5.25 kΩ K Maximum Ratings -40...+125 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M5) a Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 86 g Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 90 90 A 75 IC A 75 IC VGE= 17V 15V 13V 60 TJ = 25°C 11V 45 11V 45 30 30 9V 15 0 VGE = 17 V 15 V 13 V 60 1 9V 15 t e e h s r e a t d a un d l e l t i v t i n t s e a t t m c n te odu elop r p dev 25T60 0 TJ = 125°C 2 3 4 5 V 0 6 25T60 0 1 2 3 4 VCE Fig. 1 Typ. output characteristics 90 Fig. 2 Typ. output characteristics A 75 IF VCE = 20V 60 60 45 45 TJ = 125°C 30 TJ = 25°C 30 TJ = 125°C 15 0 6 90 75 A IC 5 V VCE TJ = 25°C 15 25T60 4 6 8 10 12 0 0,0 14 V 16 0,5 1,0 1,5 25T60 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 20 V 2,0 VF VGE 40 A 15 VGE 120 ns trr IRM TJ = 125°C VR = 300 V IF = 30 A 20 5 trr 90 30 10 VCE = 300 V IC = 30 A 150 60 30 10 IRM 0 25T60 0 40 80 120 QG Fig. 5 Typ. turn on gate charge nC 160 0 MUBW3006A7 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 8 VCE = 300V mJ VGE = ±15V Eon tr R = 33Ω 6 G TVJ = 125°C Eon 2 2,0 ns mJ 60 td(on) 4 80 t ns Eoff 1,5 300 t VCE = 300V VGE = ±15V td(off) 1,0 RG = 33Ω 40 400 Eoff 200 TVJ = 125°C t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev 20 0,5 0 0,0 100 tf 0 25T60 0 20 40 60 A 25T60 0 20 40 60 A IC IC Fig. 7 Typ. turn on energy and switching 4 Eon td(on) VCE = 300V mJ VGE = ±15V = 30A I 3 C TVJ = 125°C Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 2,0 80 ns tr 60 t Eoff VCE = 300 V mJ V = ±15 V GE I = 30 A 1,5 C TVJ = 125°C td(off) 400 ns 300 Eoff Eon 2 0 1,0 200 0,5 100 40 1 0 25T60 0 10 20 30 40 50 60 tf 20 70 Ω 80 0,0 25T60 0 10 20 30 40 RG 0 70Ω 80 60 RG Fig. 9 Typ. turn on energy and switching ICM 50 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 80 10 A K/W 60 ZthJC diode 1 IGBT 0,1 40 0,01 20 0 0 100 200 single pulse 0,001 RG = 33 Ω TVJ = 125°C 25T60 300 400 500 600 700 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area VDI...50-06P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 t