VISHAY SI4470EY

Si4470EY
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
D TrenchFETr Power MOSFETS
D Extended Temperature Range
rDS(on) (W)
ID (A)
0.011 @ VGS = 10 V
12.7
APPLICATION
0.013 @ VGS = 6.0 V
11.7
D Primary Side Switch
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4470EY
Si4470EY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
L = 0.1 mH
Continuous Source Current (Diode Conduction)a
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
7.5
50
IAS
IS
9.0
10.6
IDM
Avalanch Current
V
12.7
ID
Unit
A
50
3.1
1.5
3.75
1.85
2.6
1.3
TJ, Tstg
W
_C
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
33
40
65
80
17
21
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71606
S-03951—Rev. B, 26-May-03
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1
Si4470EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
2.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 48 V, VGS = 0 V
1
VDS = 48 V, VGS = 0 V, TJ = 55_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On
Drain-Source
On-State
State Resistancea
VDS w 5 V, VGS = 10 V
Diode Forward Voltagea
nA
mA
50
A
VGS = 10 V, ID = 12 A
0.009
0.011
VGS = 6.0 V, ID = 10 A
0.0105
0.013
rDS(on)
DS( )
Forward Transconductancea
V
gfs
VDS = 15 V, ID = 10 A
50
VSD
IS = 3.0 A, VGS = 0 V
0.75
1.2
46
57
VDS = 30 V, VGS = 10 V, ID = 12 A
11.5
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
11.5
0.25
0.85
1.4
16
25
12
18
50
75
30
45
40
60
td(on)
Rise Time
tr
Turn-Off Delay Time
VDD = 30 V, RL = 30 W
ID ^ 1.0 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = 3.0 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
VGS = 10 thru 5 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
10
20
TC = 125_C
10
2, 3 V
25_C
4V
- 55_C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
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2
30
10
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Document Number: 71606
S-03951—Rev. B, 26-May-03
Si4470EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
4000
3500
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
0.020
0.015
VGS = 6 V
VGS = 10 V
0.010
0.005
Ciss
3000
2500
2000
1500
1000
Crss
Coss
500
0.000
0
0
10
20
30
40
0
50
15
ID - Drain Current (A)
45
60
VDS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
2.1
VDS = 30 V
ID = 5 A
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
30
8
6
4
VGS = 10 V
ID = 5 A
1.8
1.5
1.2
0.9
0.6
2
0.3
0
0
10
20
30
40
0.0
- 50
50
- 25
0
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
75
100
125
150
175
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
50
0.10
100
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ - Junction Temperature (_C)
0.08
ID = 5 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Document Number: 71606
S-03951—Rev. B, 26-May-03
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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Si4470EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
60
0.6
50
ID = 250 mA
40
0.2
Power (W)
V GS(th) Variance (V)
Threshold Voltage
1.0
- 0.2
30
- 0.6
20
- 1.0
10
- 1.4
- 50
- 25
0
25
50
75
100
125
150
175
0
0.01
1
0.1
TJ - Temperature (_C)
10
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65_C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
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4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
1000
Document Number: 71606
S-03951—Rev. B, 26-May-03