RECTRON BCW68H

RECTRON
BCW68H
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.33
W(Tamb=25OC)
* Collector current
ICM :
-0.8
A
* Collector-base voltage
V(BR)CBO : -60
V
* Operating and storage junction temperature range
O
TJ,Tstg: -55 C to+150OC
SOT-23
COLLECTOR
MECHANICAL DATA
*
*
*
*
*
3
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
0.055(1.40)
0.047(1.20)
1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1
0.019(2.00)
0.071(1.80)
O
Ratings at 25 C ambient temperature unless otherwise specified.
3
Single phase , half wave, 60H Z , resistive or inductive load.
0.118(3.00)
0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
O
SYMBOL
MIN
TYP
MAX
UNITS
Collector-base breakdown voltage (IC= -10mA, IE=0)
V(BR)CBO
-60
-
-
V
Collector-emitter breakdown voltage (IC= -10mA, IB=0)
V(BR)CEO
-45
-
-
V
Emitter-base breakdown voltage (IE= -10mA, IC=0)
V(BR)EBO
-5
-
-
V
Collector cut-off current (VCB= -45V, IE=0)
ICBO
-
-
-0.02
mA
Collector cut-off current (VEB= -4V, IC=0)
IEBO
-
-
-0.02
mA
80
-
-
-
-
-
-
250
-
630
-
100
-
-
-
-
-
-0.3
V
-
-
-0.7
V
-
-
-1.25
V
-
-
-2
V
fT
100
-
-
MHz
Output capacitance (VCB= -10V, IE= 0, f=1MHZ)
Cob
-
-
18
PF
Input capacitance (VEB= -0.5V, IE= 0, f=1MHZ)
Cib
-
-
80
NF
-
-
PF
Noise figure (VCE= -5V, IE= -0.2mA, f=1kHz, Df=200Hz, RG=1KW)
10
dB
CHARACTERISTICS
DC current gain (VCE= -10V, IC= -0.1mA)
DC current gain (VCE= -1V, IC= -10mA)
DC current gain (VCE= -1V, IC= -100mA)
hFE
DC current gain (VCE= -2V, IC= -500mA)
Collector-emitter saturation voltage(IC= -100mA, IB= -10mA)
Collector-emitter saturation voltage(IC= -500mA, IB= -50mA)
Base - emitter saturation voltage (IC= -100mA, IB= -10mA)
Base - emitter saturation voltage (IC= -500mA, IB= -50mA)
Transition frequency (VCE= -10V, IC= -20mA, f=100MHZ)
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
VCE(sat)
VBE(sat)
180
DH
2006-3
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in
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