RECTRON BZT52C2V4

RECTRON
BZT52C2V4BZT52C39
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 39 Volts POWER RATING 500 mWatts
FEATURES
*
*
*
*
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose Medium Current
Ideally Suited for Automated Assembly Processes
SOD-123
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.01 gram
.110(2.80)
.102(2.60)
.006(.15)
.026(.65)
.018(.45)
.067(1.70)
.059(1.50)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.152(3.85)
.140(3.55)
.003(.08)
*
*
*
*
*
.049(1.25)
.041(1.05)
o
Ratings at 25 C ambient temperature unless otherwise specified.
REF .020(0.50)
.004(.10)
.000(.00)
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation
@TA=25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
(Note 1)
VALUE
UNITS
PD
500
mW
TJ
-65 to +150
o
C
-65 to +150
o
C
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYP.
MAX.
Thermal Resistance Junction to Ambient (Note 1)
CHARACTERISTICS
R θJA
-
-
305
o
Max. Instantaneous Forward Voltage at IF= 10mA
VF
-
-
0.9
Volts
Note 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas
25mm2.
UNITS
C/W
2006-3
ELECTRICAL CHARACTERISTICS
TYPE
O
(@TA=25 C unless otherwise specified)
Zener voltage Range(Note 1)
Test
Maximum Zener impedance
VZ (V) @ IZT
current
(Note 2)
Nom
Min
Max
Maximum
reverse leakage
Current
Typical
Temperature
Coefficent @IZTC
mV/OC
Test
Current
IZTC
ZZT
at IZT
(Ω)
ZZK
(Ω)
at
IZK
(mA)
IR
(uA)
at VR
(V)
Min
Max
mA
Volts
Volts
Volts
IZT
(mA)
BZT52C2V4
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52C3V6
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52C3V9
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V3
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2
2.5
5
BZT52C6V2
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
27.4
33.4
2
BZT52C33
33
31.0
35.0
2
80
325
0.5
0.1
23.1
BZT52C36
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
0.1
27.3
33.4
41.2
2
BZT52C39
39
37.0
41.0
2
130
350
0.5
Notes 1. Short duration test pulse used to minimize self-heating effect.
2. f = 1KHz
RECTRON
RATING AND CHARACTERISTICS CURVES (BZT52CSV4-BZT52C39)
50
0.6
0.5
IZ, ZENER CURRENT(mA)
PD, POWER DISSIPATION (W)
TJ=25OC
0.4
0.3
0.2
0.1
0
40
C6V2
C8V2
30
20
Test Current Iz
5.0mA
10
25
50
75
100
125
150
0
1
2
O
TA, AMBIENT TEMPERATURE( C)
10
IZ, ZENER CURRENT (mA)
C12
C15
C18
Test Current Iz
5mA
10
TJ=25OC
C10
20
4
5
6
7
8
9
10
Figure2 Zener Breakdown Characteristics
30
TJ=25OC
3
VZ, ZENER VOLTAGE(V)
Figure1 Power Dissipation vs Ambient Temperature
IZ, ZENER CURRENT (mA)
C6V8
C3V3 C4V7
0
0
Test Current Iz
2mA
C22
C27
C33
C36
0
C39
8
6
4
Test Current Iz
2mA
2
0
0
10
20
30
40
VZ, ZENER VOLTAGE(V)
1000
0
10
20
30
40
50
60
70
80
90 100
VZ, ZENER VOLTAGE(V)
Figure3 Zener Breakdown Characteristics
CT,TOTAL CAPACITANCE(pF)
C3V9 C5V6
C2V7
Figure4 Zener Breakdown Characteristics
TJ=25OC
f=1MHz
VR=1V
VR=2V
100
VR=1V
VR=2V
1
0
10
100
VZ,NOMINAL ZENER VOLTAGE(V)
Figure5 Total Capacitance vs Nominal Zener Voltage
RECTRON
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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RECTRON