RECTRON FFM105

FFM101
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FFM107
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70)
0.051 (1.29)
0.110 (2.79)
0.086 (2.18)
0.180(4.57)
0.160(4.06)
0.012 (0.305)
0.006 (0.152)
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.008 (0.203)
0.004 (0.102)
o
Ratings at 25 C ambient temperature unless otherwise specified.
0.209 (5.31)
0.185 (4.70)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T A = 55o C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
SYMBOL
FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS
VRRM
50
100
200
400
600
800
1000
VRMS
35
70
140
280
420
560
700
Volts
Volts
VDC
50
100
200
400
600
800
1000
Volts
IO
1.0
Amps
I FSM
30
Amps
(Note 2) Rθ JL
(Note 3) Rθ JA
30
70
15
-55 to + 150
CJ
T J , T STG
0
0
C/ W
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current,Full cycle Average at TA = 25oC
Maximum DC Reverse Current at
@T A = 25 o C
Rated DC Blocking Voltage
@T A = 125 oC
VF
Maximum Reverse Recovery Time (Note 4)
trr
FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS
1.3
50
5.0
IR
Volts
uAmps
uAmps
100
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
150
250
500
uAmps
nSec
2002-11
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
RATING AND CHARACTERISTIC CURVES ( FFM101 THRU FFM107 )
1.0
.8
.6
.4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.2
0
0
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
0
1
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( )
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
4
TJ = 100
1.0
.4
.1
.04
TJ = 25
.01
2
4 6 8 10 20 40 60 80100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
TJ = 25
Pulse Width = 300us
1% Duty Cycle
1.0
.1
.01
.6
.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
PULSE
0
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-0.25A
(+)
-1.0A
1cm
JUNCTION CAPACITANCE, (pF)
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
(+)
25 Vdc
(approx)
(-)
8.3ms Single Half Sine-Wave
(JEDED Method)
SET TIME BASE FOR
50/100 ns/cm
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ = 25
2
1
.1
.2 .4
1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
Dimensions in inches and (millimeters)
RECTRON