MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 2 EMITTER 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted) O RATINGS SYMBOL VALUE UNITS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C o O Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted) O CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 0.1uAdc, I E = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (I E = 0.1uAdc, I C = 0) V(BR)EBO 6.0 - Vdc Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc) IBEV - 0.1 uAdc Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc) ICEX - 0.1 uAdc DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 20 - (I C = 1.0mAdc, V CE = 1.0Vdc) 40 - ON CHARACTERISTICS(1) (I C = 10mAdc, V CE = 1.0Vdc) 80 - (I C = 150mAdc, V CE = 1.0Vdc) 100 300 (I C = 500mAdc, V CE = 2.0Vdc) 40 - Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) hFE - - 0.4 - 0.75 0.75 0.95 - 1.2 fT 250 - MHz Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Ccb - 6.5 pF Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Ceb - 30 pF Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hie 1.0 15 kohms Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hre 0.1 8.0 X 10 -4 Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hfe 40 500 - Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hoe 1.0 30 umhos td - 15 tr - 20 ts - 225 tf - 30 (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc) (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) <300ms,Duty Cycle< Note : Pulse Test: Pulse Width-2.0% ns ns RATING AND CHARACTERISTICS CURVES ( MMBT4401 ) O 25 C 100OC 30 10 7.0 5.0 Cobo Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 2.0 0.1 3.0 QT 2.0 1.0 0.7 0.5 0.3 Ccb 3.0 VCC = 30V IC/IB = 10 QA 0.2 0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 20 30 50 10 20 Figure 1. Capacitances IC/IB=10 70 50 200 300 500 30 20 20 10 7.0 7.0 20 30 50 70 100 200 300 5.0 500 tf 30 10 10 10 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 4. Rise and Fall Times 100 ts'=ts -1/8tf IB1=IB2 IC/IB= 10 to 20 70 50 tf, FALL TIME (ns) 200 20 IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time 300 VCC= 30V IC/IB=10 tr 50 tr@ VCC= 30V tr@ VCC= 10V td@ VEB= 2.0V td@ VEB= 0V t, TIME (ns) t, TIME (ns) 70 100 100 70 ts', STORAGE TIME (ns) 50 Figure 2. Charge Data 100 5.0 30 IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (V) 100 70 IC/IB= 20 VCC= 30V IB1=IB2 30 IC/IB=10 20 10 50 7.0 30 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time 300 500 RATING AND CHARACTERISTICS CURVES ( MMBT4401 ) 8.0 10 IC=1.0mA, RS = 150 W IC=500uA, RS = 200 W IC=100uA, RS = 2.0 kW IC=50uA, RS = 4.0kW f = 1.0 kHz RS = OPTIMUM SOURCE RS = RESISTANCE 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 8.0 6.0 4.0 2.0 0 50 50 100 f, FREQUENCY (KHz) Figure 7.Frequency Effects 100 MMBT4401 UNIT 1 MMBT4401 UNIT 2 70 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hje, INPUT IMPEDANCE (OHMS) hfe, CURRENT GAIN 20k 50k 100k 400 30 300 100 80 60 40 30 20 0.1 5.0 7.0 10 MMBT4401 UNIT 1 MMBT4401 UNIT 2 200 IC, COLLECTOR CURRENT (mA) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 9.Cuttent Gain Figure 10.Input Impedance 100 10 MMBT4401 UNIT 1 MMBT4401 UNIT 2 3.0 2.0 1.0 0.7 0.5 50 COEFFICIENT (mV/ oC) 7.0 5.0 V, VOLTAGE (V) 500 1.0k 2.0k 5.0k 10k Figure 8.Source Resistance Effects 200 20 10 MMBT4401 UNIT 1 MMBT4401 UNIT 2 5.0 2.0 0.3 0.2 0.1 100 200 RS, SOURCE RESISTANCE (OHMS) 300 20 0.1 IC=50uA IC=100uA IC=500uA IC=1.0mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 11.Voltage Feedback Ratio 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 12.Temperature Coefficients RATING AND CHARACTERISTICS CURVES ( MMBT4401 ) hFE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0V VCE = 10V 2.0 TJ = 125 C O 1.0 25 C O 0.7 0.5 -55 C O 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain VCE, COLLECTOR - EMITTER VOLTAGE (V) 1.0 TJ = 25 C O 0.8 0.6 10 mA IC = 1.0mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region + 0.5 TJ = 25 C O VBE(sat) @ IC/IB = 10 0 VOLTAGE (V) O 0.8 COEFFICIENT (mV/ C) 1.0 0.6 VBE @ VCE= 10V 0.4 0.2 0 0.1 VCE(sat) @ IC/IB = 10 0..2 0.5 1.0 2.0 5.0 10 QVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 20 50 100 200 500 -2.5 0.1 QVB for VBE 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages Figure 16. Temperature Coefficients 500 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.