MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 2 EMITTER 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM TATINGES ( @ TA = 25OC unless otherwise noted) RATINGS SYMBOL VALUE UNITS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C o Storage Temperature Range O ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = -1.0 mAdc, I B = 0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (I C = -0.1mAdc, I E = 0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (I E = -0.1mAdc, I C = 0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (V CE = -35Vdc, V BE(off) = -0.4Vdc) IBEV - -0.1 uAdc Collector Cutoff Current (V CE = -35Vdc, V EB = -0.4Vdc) ICEX - -0.1 uAdc DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc) 30 - (I C = -1.0mAdc, V CE = -1.0Vdc) 60 - ON CHARACTERISTICS (1) (I C = -10mAdc, V CE = -1.0Vdc) 100 - (I C = -150mAdc, V CE = -2.0Vdc) 100 300 (I C = -500mAdc, V CE = -2.0Vdc) 20 - Collector-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) hFE - - -0.4 - -0.75 -0.75 -0.95 - -1.3 fT 200 - MHz Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Ccb - 8.5 pF Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz) Ceb - 30 pF Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hie 1.5 15 kohms Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hre 0.1 8.0 X 10 -4 Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hfe 60 500 - Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hoe 1.0 100 umhos td - 15 tr - 20 ts - 225 tf - 30 (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) VCE(sat) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -20mAdc, V CE = -10Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -30Vdc, V EB = -2.0Vdc, I C = -150mAdc, I B1 = -15mAdc) (V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) <300ms,Duty Cycle<2.0% Note : Pulse Test: Pulse Width- ns ns RATING AND CHARACTERISTICS CURVES ( MMBT4403 ) O 25 C 100OC 30 Ceb Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 VCC=30V IC/IB=10 3.0 2.0 1.0 0.7 0.5 QT 0.3 3.0 QA 0.2 2.0 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 10 20 Figure 1. Capacitances 70 100 200 300 500 100 IC/IB=10 70 50 70 20 t, TIME (ns) 30 30 20 10 10 7.0 7.0 10 20 30 50 70 100 200 VCC=30V IC/IB=10 50 tr @ VCC= 30V tr @ VCC= 10V td@ VBE(off)= 2V td @ VBE(off)= 0V 300 5.0 500 10 IC,COLLECTOR CURRENT (mA) 20 30 50 70 100 Figure 4. Rise Times 300 IC/IB=10 200 IC/IB=20 100 70 IB1= IB2 ts' =ts -1/8tf 50 30 10 200 IC,COLLECTOR CURRENT (mA) Figure 3. Turn-On Time ts',STORAGE TIME (ns) t, TIME (ns) 50 Figure 2. Charge Data 100 5.0 30 IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (V) 20 30 50 70 100 200 IC,COLLECTOR CURRENT (mA) Figure 5. Storage Time 300 500 300 500 RATING AND CHARACTERISTICS CURVES ( MMBT4403 ) VCE = -10Vdc, TA = 25 C O Bandwidth = 1.0Hz 10 10 8 8.0 IC = 1.0mA, RS = 430W IC = 500uA, RS = 560W IC = 50uA, RS = 2.7kW IC = 100uA, RS = 1.6kW 6 4 RS = OPTIMUM SOURCE RESISTANCE 2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 NF,NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz 6.0 4.0 2.0 0 50 50 100 f, FREQUENCY (KHz) Figure 6.Frequency Effects 50k hfe, CURRENT GAIN 500 300 200 MMBT4403 UNIT 1 MMBT4403 UNIT 2 70 50 0.5 0.7 1.0 2.0 3.0 hie, INPUT IMPEDANCE (OHMS) 700 0.2 0.3 5.0k 10k 20k 50k 5k 2k 1k 500 200 100 0.1 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 10k 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) Figure 8.Cuttent Gain Figure 9.Input Impedance 20 500 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 hoe, OUTPUT ADMITTANCE (umhos) hre, VOLTAGE FEEDBACK RATIO (X 10-4) 1.0k 2.0k 20k IC, COLLECTOR CURRENT (mAdc) 0.1 0.1 500 Figure 7.Source Resistance Effects 100k 30 0.1 100 200 RS, SOURCE RESISTANCE (OHMS) 1000 100 IC = 50uA 100uA 500uA 1.0mA 100 50 20 MMBT4403 UNIT 1 MMBT4403 UNIT 2 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10.Voltage Feedback Ratio Figure 11.Temperature Coefficients RATING AND CHARACTERISTICS CURVES ( MMBT4403 ) hFE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0V VCE = 10V 2.0 TJ = 125OC 25OC 1.0 -55OC 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR - EMITTER VOLTAGE (V) Figure 12. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, BASE CURRENT (mA) Figure 13. Collector Saturation Region 0.5 TJ = 25OC VBE(sat)@IC/IB = 10 0.6 VBE(sat)@VCE = 10V 0 VOLTAGE (V) O 0.8 COEFFICIENT (mV/ C) 1.0 0.4 0.2 0..2 0.5 1.0 2.0 5.0 10 20 0.5 1.0 1.5 QVS for VBE 2.0 VCE(sat)@IC/IB = 10 0 0.1 QVC for VCE(sat) 50 100 200 500 2.5 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 14. "ON" Voltages Figure 15. Temperature Coefficients 500 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. 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