RECTRON MMST4403 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.6 A * Collector-base voltage V(BR)CBO: -40 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation (1) PD 200 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - NOTES : 1.Valid provided that terminals are kept at ambient temperature. UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C = -1.0mAdc, I B = 0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (I C = -100µAdc, I E = 0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (I E = -100µAdc, I C = 0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (V CE = -35Vdc,I B =0) ICEO - -0.1 µAdc Collector Cutoff Current (V CB = -35Vdc, I E = 0) ICBO - -0.1 µAdc Emitter Cutoff Current (V EB = -4Vdc, I C = 0) IEBO - -0.1 µAdc IBL - -100 nAdc DC Current Gain (I C = -100µAdc, V CE = -1.0Vdc) 30 - (I C = -1.0mAdc, V CE = -1.0Vdc) 60 - 100 - (I C = -150mAdc, V CE = -2.0Vdc) 100 300 (I C = -500mAdc, V CE = -2.0Vdc) 30 - - -0.40 - -0.75 -0.75 -0.95 - -1.30 OFF CHARACTERISTICS (2) Base Cutoff Current (V CE = -35Vdc, V EB(off) = -0.4Vdc ON CHARACTERISTICS (2) (I C = -10mAdc, V CE = -1.0Vdc) Collector-Emitter Saturation Voltage (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) hFE VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT 200 - MHz Output Capacitance (V CB =-10Vdc, I E = 0, f= 1.0MHz) Cobo - 8.5 pF Input Capacitance (V EB =-0.5Vdc, I C = 0, f= 1.0MHz) Cebo - 30 pF Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) hie 1.5 15 kΩ Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) hre 0.1 8.0 X 10-4 Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) hfe 60 400 - Output Admittance (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) hoe 1.0 100 µs td - 15 tr - 20 ts - 225 tf - 30 Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 1.0kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -30Vdc, V BE = -2.0Vdc, I C = -150mAdc, I B1 = -15mAdc) (V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) ns ns <300µs,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON RATING AND CHARACTERISTICS CURVES ( MMST4403 ) VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS) 1.6 1.4 1.2 IC = 10 mA IC = 1.0 mA IC = 30 mA IC = 100 mA IC = 300mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 100 IB,BASE CURRENT (mA) Figure 1. Typical Collector Saturation Region 30 20 CAPACITANCE(pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Figure 2.Capacitances(Typical) RECTRON