TOC Control Devices HIGH SPEED PIN DIODES DESCRIPTION APPLICATIONS The GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The GC4200 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. These devices can withstand storage temperatures from -65° to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-S-19500. The GC4200 series will operate with as little as +10 mA forward bias. Switch applications include high speed switches (ECM systems), TR switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4200 series are also used as passive and active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenua- ELECTRICAL SPECIFICATIONS: TA = 25°C MODEL NUMBER BREAKDOWN VOLTAGE (IR = 10µA MAX) VB (MIN) (Volts) JUNCTION 1 SERIES RESISTANCE 2 CARRIER LIFETIME (20mA, 1 GHz) (IR=6mA, IF=10mA) CJ-10 (MAX) RS20 (MAX) TL (TYP) (pF) (Ohms) (nS) CAPACITANCE 60 THERMAL RESISTANCE (MAX) (°C/W) GC4270 70 0.06 1.5 GC4271 70 0.10 1.0 60 80 70 GC4272 70 0.20 0.8 60 70 GC4273 70 0.30 0.7 60 60 GC4274 70 0.40 0.6 60 50 GC4275 70 0.50 0.5 60 40 GC4210 100 0.06 1.5 100 80 GC4211 100 0.10 1.0 100 70 GC4212 100 0.20 0.75 100 70 GC4213 100 0.30 0.6 100 60 GC4214 100 0.40 0.5 100 50 GC4215 100 0.50 0.35 100 40 GC4220 250 0.06 2.5 400 80 GC4221 250 0.10 2.0 400 70 GC4222 250 0.20 1.5 400 70 GC4223 250 0.30 1.0 400 60 GC4224 250 0.40 0.8 400 50 GC4225 250 0.50 0.6 400 40 Notes: 1. Capacitance is measured at 1 MHz and -10 volts. 2. Resistance is measured using transmission loss techniques. 3. This series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request. The tabulated specifications above are for the style 30 package. Diodes may also be available in other case styles. Each type offers trade offs in series resistance, junction capacitance and carrier lifetime; the proper choice of which depends on the end application. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.) RATINGS Maximum Leakage Current: 0.5 µA at 80% of minimum rated breakdown Operating Temperature: -55°C to +150°C Storage Temperature: -65°C to +200°C SEMICONDUCTOR OPERATION 75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748 71 TOC Control Devices HIGH SPEED PIN DIODES Rs SERIES RESISTANCE - (OHMS) TYPICAL PERFORMANCE CURVES 100 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 10 1.0 .1 .01 .1 1.0 10. I F FORWARD BIAS CURRENT - (mA) 100 SEMICONDUCTOR OPERATION 75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748 72