S T A6610 S amHop Microelectronics C orp. Nov.24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON ). V DS S ID 30V 7.6A R DS (ON) ( m Ω ) Max R ugged and reliable. 23 @ V G S = 10V S urface Mount P ackage. E S D P rotected. 35 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 P DIP -8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol N-Channel Unit Drain-S ource Voltage V DS 30 V G ate-S ource Voltage VGS 20 V 7.6 A 6 A I DM 30 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ T a ID 70 C -P ulsed b Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a T a= 25 C 3 PD T a=70 C Operating J unction and S torage Temperature R ange 2 W TJ, TS TG -55 to 150 C R JA 41.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T A 6610 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.8 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID =7A 17 23 m ohm V GS =4.5V, ID =5A 23 35 m ohm OFF CHAR ACTE R IS TICS 30 V ON CHAR ACTE R IS TICS b V DS = 15V, V GS = 10V ID(ON) gFS On-S tate Drain Current Forward Transconductance 1.0 20 A 15 S 620 PF 190 PF 115 PF 13 ns 14.4 ns 40 ns 8.4 ns V DS =15V, ID =7A,V GS =10V 13 nC V DS =15V, ID =7A,V GS =4.5V 6.8 nC 1.5 nC 3.5 nC V DS = 10V, ID =7A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c V DD = 15V, ID = 7A, R L=2.1 ohm, V GS = 10V, R GEN = 6 ohm tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID = 7A, V GS =10V 2 S T A6610 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage C Min Typ Max Unit Condition Symbol b V GS = 0V, Is =1.7A VSD 1.2 0.8 5 Notes a.Surface Mounted on FR4 Board,tІ10sec. b.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І 2%. c.Guaranteed by design,not subject to production testing. 20 40 VGS=4.5V VGS=10V 32 16 VGS=3.5V ID, Drain Current (A) ID, Drain Current(A) VGS=4V 24 16 VGS=3V 8 -55 C Tj=125 C 12 25 C 8 4 VGS=2.5V 0 0 0 0.5 1 1.5 2 2.5 0 3 0.7 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 2.8 3.5 4.2 1.75 R DS (ON) , On-R es is tance Normalized R DS (on) (m Ω) 2.1 Figure 2. Transfer Characteristics 48 32 V G S =4.5V 24 16 V G S =10V 8 1 1.4 VGS, Gate-to-Source Voltage (V) 40 1 8 16 24 32 V 1.60 1.30 1.15 V G S =4.5V I D =5A 1.00 0.85 -25 40 V G S =10V I D =7A 1.45 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 20.0 I D =7A Is , S ource-drain current (A) 50 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T A6610 40 75 C 30 125 C 20 25 C 10 0 0 2 4 6 8 25 C 75 C 1.0 0.4 10 V G S , G ate-S ource Voltage (V ) 125 C 10.0 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T A6610 V G S , G ate to S ource V oltage (V ) 900 C, Capacitance (pF) 750 Ciss 600 450 300 Coss 150 Crss 6 5 10 15 20 25 6 4 2 0 30 2 6 4 8 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance F igure 9. G ate C harge 40 250 100 60 I D , Drain C urrent (A) Tr S witching T ime (ns ) V DS =15V I D =7A 8 0 0 0 10 T D(off) Tf T D(on) 10 V DS =15V ,ID=7A 1 V G S =10V 1 10 R N) L im it 10m 100 11 s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 0.1 60 100 300 600 6 10 (O DS 1 10 30 50 R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 10. Maximum S afe O perating Area Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 STA6610 PACKAGE OUTLINE DIMENSIONS PDIP 8 SYMBOL A A1 A2 b c b2 b3 L e D D1 E E1 eA eB MIN .145 .020 .125 .015 .009 .045 .030 .125 .090 .373 .030 .300 .245 .280 .310 INCHES NOM .172 .130 .018 .012 .060 .039 .132 .100 .386 .045 .310 .250 .325 MAX .200 .135 .021 .014 .070 .045 .140 .110 .400 .060 .320 .255 .365 6 MIN 3.68 0.51 3.18 0.38 0.23 1.14 0.76 3.18 2.29 9.47 0.76 7.62 6.22 7.11 7.87 MILLIMETERS NOM MAX 4.37 5.08 3.30 3.43 0.46 0.53 0.30 0.36 1.52 1.78 0.99 1.14 3.35 3.56 2.54 2.79 9.80 10.16 1.14 1.52 7.87 8.13 6.35 6.48 8.26 9.27