STG8810 Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 20 @ VGS=4.5V 20V Suface Mount Package. 7A 28 @ VGS=2.5V ESD Protected. D 1/D 2 S1 S1 G1 8 7 6 5 1 2 3 4 D2 D1 T S S OP D 1/D 2 S2 S2 G2 G1 (T OP V IE W) G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a Limit 20 ±12 Units V V TA=25°C 7 A TA=70°C 5.6 A 28 A 1.5 W 1 W -55 to 150 °C 85 °C/W b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,26,2008 1 www.samhop.com.tw STG8810 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Conditions Min VGS=0V , ID=250uA 20 Drain-Source On-State Resistance gFS Forward Transconductance Max 1 ±10 VDS=16V , VGS=0V VGS= ±12V , VDS=0V Units V uA uA 0.85 1.5 16.5 20 V m ohm VGS=4V , ID=6.8A 17 21 m ohm VGS=3V , ID=6.3A 20 25 m ohm VGS=2.5V , ID=6A 23 28 m ohm VDS=5V , ID=7A 12 S VDS=10V,VGS=0V f=1.0MHz 815 215 180 pF pF pF 28 ns VDS=VGS , ID=250uA VGS=4.5V , ID=7A RDS(ON) Typ 0.5 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=10V ID=1A VGS=4.5V RGEN=10 ohm VDS=10V,ID=7A, VGS=4.5V 83 ns 63 ns 41 ns 11.5 nC 2.4 nC 5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=2.0A 0.79 2.0 1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Nov,26,2008 2 www.samhop.com.tw STG8810 Ver 1.0 30 15 24 VGS=2.5V I D, Drain Current(A) I D, Drain Current(A) VGS=4.5V VGS=2V 18 12 6 0 1.5 1 0.5 2.5 2 25 C Tj=125 C 0.5 3 1.0 1.5 2.0 2.5 3.0 V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 1.8 R DS(on), On-Resistance Normalized 50 R DS(on)(m Ω) -55 C 6 0 0 40 30 VG S =2.5V 20 VG S =4.5V 10 1.6 1.4 V G S =4.5V I D = 7A 1.2 V G S =2.5V I D =6 A 1.0 0.8 1 6 12 18 24 30 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 9 3 VGS=1.5V 0 12 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,26,2008 3 www.samhop.com.tw STG8810 Ver 1.0 60 20.0 Is, Source-drain current(A) I D =7 A 50 RDS(on)(m Ω) 40 30 125 C 20 75 C 10 0 0 2 25 C 2.5 3 3.5 25 C 125 C 75 C 1.0 0 0.4 0.8 1.2 1.6 2.0 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 750 C, Capacitance(pF) 5.0 4 900 600 450 Coss 300 Crss 150 0 0 10.0 2 4 6 8 10 5 V DS = 10V I D =7 A 4 3 2 1 0 12 0 2 4 8 6 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 100 I D, Drain Current(A) Switching Time(ns) 60 Tr TD(off) Tf TD(on) 10 VDS=10V,ID=1A VGS=4.0V 1 1 10 ( it 10 1m 1 0.1 100 S L im 10 0.1 10 RD ) ON 10 0m 0u s s ms s DC V G S =4.5V S ingle P ulse T A =25 C 1 10 30 50 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,26,2008 4 www.samhop.com.tw STG8810 Ver 1.0 VDD t on VIN D tf 90% 90% VOUT VOUT VGS RGEN t off td(off) tr td(on) RL 10% INVERTED 10% G 90% A S V IN 50% 50% 10% PULSE WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit Normalized Transient Thermal Resistance 10 1 0.5 0.2 P DM 0.1 0.1 t1 t2 0.05 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Nov,26,2008 5 www.samhop.com.tw STG8810 Ver 1.0 PACKAGE OUTLINE DIMENSIONS DETAIL A T S S OP -8 DETAIL A MIN 0.85 0.80 0.19 MAX MIN 0.033 0.031 0.007 0.30 MAX 0.012 2 2 3 3 Notes: 1. This drawing is for general information only.Refer to JEDEC Drawing MO-153,Variation AA,for proper dimensions,tolerances,datums,etc. 2. Dimension D does not include mold Flash,protrusions or gate burrs.Mold Flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E does not include inter-lead Flash or protrusions.Inter-lead Flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion.Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E to be determined at Datum Plane H. Nov,26,2008 6 www.samhop.com.tw STG8810 Ver 1.0 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape UNIT : р PACKAGE TSSOP 8 A0 6.08 B0 4.40 K0 D0 D1 E E1 E2 1.60 ӿ1.50 + 0.1 - 0.0 ӿ1.50 + 0.1 - 0.0 12.00 ² 0.3 1.75 5.50 ² 0.05 P1 P2 T 8.00 4.00 2.00 ²0.05 0.30 ²0.05 W W1 H 16.0 ӿ13.0 + 0.5 - 0.2 K S G R 10.6 2.0 ²0.5 P0 TSSOP-8 Reel UNIT : р TAPE SIZE 12 р REEL SIZE ӿ330 M 330 N 100 12.5 V Nov,26,2008 7 www.samhop.com.tw