S T M6922 S amHop Microelectronics C orp. Jan.22 ,2007 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m ıΩ ) Max R ugged and reliable. 26 @ V G S = 10V 40V 7A S urface Mount P ackage. E S D P rotected. 33 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 7 A 5.9 A IDM 28 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta ID 70 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C 2 W 1.44 Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T M6922 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA V GS (th) V DS = V GS , ID = 250uA 1.8 3 V V GS =10V, ID = 6A 19 26 m ohm V GS =4.5V, ID= 5A 27 33 m ohm OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance R DS (ON) ID(ON) gFS On-S tate Drain Current Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time 15 A 14 S 696 PF 123 PF 74 PF 13.5 ns 13 ns 45 ns 8 ns V DS =20V, ID =6A,V GS =10V 13.3 nC V DS =20V, ID =6A,V GS =4.5V 7 nC 2.2 3.9 nC V DS = 5V, ID = 6A c Input Capacitance Turn-On Delay Time V DS = 5V, V GS = 10V 1 V DS =20 V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID = 6 A V GS =4.5V 2 nC S T M6922 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.78 V GS = 0V, Is =1.7A VSD 1.2 V Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 30 15 VG S =10V VG S =5V 12 VG S =4.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 24 VG S =4V 18 12 VG S =3.5V 6 0 0 2.0 1.5 1.0 0.5 2.5 T j=125 C 9 -55 C 6 3 25 C 0 0.0 3.0 V DS , Drain-to-S ource Voltage (V ) 1.8 2.7 3.6 4.5 5.4 F igure 2. Trans fer C haracteris tics 1.75 R DS (ON) , On-R es is tance Normalized 60 50 40 V G S =4.5V 30 20 V G S =10V 10 1 0.9 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (on) (m Ω) 5 C Min Typ Max Unit Condition S ymbol 1.60 1.30 1.15 6 12 18 24 30 V G S =4.5V I D =5A 1.00 0.85 1 V G S =10V I D =6A 1.45 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T M6922 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 90 20.0 I D =6A Is , S ource-drain current (A) R DS (on) (m Ω) 75 60 45 75 C 125 C 30 15 0 25 C 0 2 4 6 8 10.0 5.0 25 C 125 C 1.0 10 V G S , G ate-S ource Voltage (V ) 0 0.25 0.50 75 C 0.75 1.00 1.25 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6922 V G S , G ate to S ource V oltage (V ) 1200 C , C apacitance (pF ) 1000 5 800 C is s 600 400 200 C oss C rs s 0 0 10 V DS =20V I D =6A 8 6 4 2 0 5 10 15 20 25 0 30 2 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 250 100 60 TD(off) I D , Drain C urrent (A) Tr S witching T ime (ns ) 6 4 TD(on) Tf 10 V D S =20V ,ID=1A 1 30 10 RD 0.1 0.03 6 10 60 100 300 600 )L im it 10 10 0m ms s 1s 1 V G S =10V 1 ON S( DC V G S =10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( Ω) 1 10 40 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6922 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45㨻 e B 0.05 TYP. A1 0.00 8 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E 1.35 0.10 4.80 3.81 H L 5.79 0.41 0㨻 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8㨻 6 M IN 0.053 0.004 0.189 0.150 0.228 0.016 0㨻 M AX 0.069 0.010 0.196 0.157 0.244 0.050 8㨻 S T M6922 SO-8 Tape andReel Data SO-8 Carrier Tape unit:ȱ PACKAGE SO P 8 N 150Ȱ A0 6.40 B0 5.20 D0 D1 E E1 E2 P0 P1 P2 T 2.10 ᭑1.5 (MIN) ᭑1.5 + 0.1 - 0.0 12.0 㨼0.3 1.75 5.5 㨼0.05 8.0 4.0 2.0 㨼0.05 0.3 㨼0.05 M N W W1 H K S G R V 62 㨼1.5 12.4 + 0.2 16.8 - 0.4 ᭑12.75 + 0.15 K0 SO-8 Reel UNIT :ȱ TAPE SIZE REEL SIZE 12 ȱ ᭑330 330 㨼 1 7 2.0 㨼0.15