STM8020 SamHop Microelectronics Corp. Mar. 30 2007 N-Channel Enhancement Mode Field Effect Transistor F E AT UR E S PRODUCT SUMMARY VDSS ID RDS(ON) S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 9 @ VGS = 10V 35V S urface Mount P ackage. E S D P rotected. 12A 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 35 V Gate-S ource Voltage V GS 20 V 12 A 9.6 A IDM 48 A IS 1.7 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta ID 70 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C 2.5 W PD Ta=70 C Operating Junction and S torage Temperature R ange 1.6 T J , T S TG -55 to 150 C R JA 50 C /W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 STM8020 ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS=28V, VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 20V, VDS =0V 10 uA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA 1.4 3 V Drain-Source On-State Resistance RDS(ON) VGS= 10V, ID = 10A 7.2 9 m ohm VGS = 4.5V, ID = 6A 9.5 13 m ohm OFF CHARACTERISTICS 35 V ON CHARACTERISTICS b VDS = 10V, VGS = 10V ID(ON) gFS On-State Drain Current Forward Transconductance 1 20 A 25 S 1400 PF 255 PF 145 PF 19 ns 20 ns 77 ns 40 ns VDS =15V, ID = 10A,VGS =10V 24 nC VDS =15V, ID = 10A,VGS =4.5V 11 nC VDS =15V, ID = 10A VGS =10V 2.5 nC 5.5 nC VDS = 10V, ID =10A DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time VDS =20V, VGS = 0V f =1.0MHZ c tD(ON) VDD = 15V ID = 1A VGS = 10V RGEN = 6 ohm t tD(OFF) Fall Time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 STM8020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Min Typ C Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.7A VSD 0.73 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. V G S =4V VG S =10V 80 ID , Drain C urrent (A) 20 VG S=4.5 V VG S=3.5 V 16 I D , Drain C urrent (A) 100 60 V G S =3V 40 20 0 V G S =2.5V T j =125 C 12 8 0 0 0.5 1 2 1.5 2.5 3 0 1.75 15 1.60 RDS(ON), On-Resistance Normalized R DS (on) (m Ω) 18 VGS=4.5V 9 VGS=10V 6 3 1 20 40 60 80 1.4 2.1 2.8 3.5 4.2 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 1 0.7 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 12 -55 C 25 C 4 1.30 VGS=4.5V ID=6A 1.15 1.0 0 100 VGS=10V ID=10A 1.45 0 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T M8020 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 75 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 30 20.0 I D =10A Is , S ource-drain current (A) R DS (on) (m Ω) 25 20 15 125 C 10 25 C 75 C 5 0 0 2 4 6 8 10.0 25 C 1.0 10 V G S , G ate-S ource Voltage (V ) 75 C 125 C 0.2 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM8020 10 Ciss C , C apacitance (pF ) 1500 6 VGS, Gate to Source Voltage (V) 1800 1200 900 600 Coss 300 Crss 6 4 2 0 0 0 VDS=15V ID=10A 8 5 10 15 20 25 0 30 4 VDS, Drain-to Source Voltage (V) 8 20 16 12 24 28 32 Qg, Total Gate Charge (nC) Figure 10. Gate Charge Figure 9. Capacitance 50 Tf TD(on) 10 V DS =15V ,ID=1A 1 N) S 1 0.1 0.03 6 10 10 10 V G S =10V 1 (O 10 Tr RD TD(off) 100 60 ID, Drain Current (A) Switching Time (ns) Lim it 600 DC Rg, Gate Resistance (Ω) ms s 1s VGS=10V Single Pulse TA=25 C 0.1 60 100 300 600 0m 1 10 30 50 VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 on 0.01 Single Pulse 0.01 0.00001 1. RthJA (t)=r (t) * R JAth 2. R th JA=See Datasheet (t) 3. TJM-TA = PDM* R JA th 4. Duty Cycle, D=t1/t2 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 100 1000 STM8020 PACKA GE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008TYP. 0.016 TYP. H SYMBOLS A A1 D E H L MILLIMETERS MIN 1.35 0.10 4.80 3.81 5.79 0.41 0± INCHES MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 6 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± S T M8020 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 7 ψ12.75 + 0.15 2.0 ±0.15