STM8300 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID 30V 5.3A V DSS ID -30V -4.7A R DS(ON) (m Ω) Max 46 @ VGS=10V 56 @ VGS=-10V 65 @ VGS=4.5V 90 @ VGS=-4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous TA=25°C TA=70°C IDM P-Channel Units 30 -30 V ±20 ±20 V 5.3 -4.7 A 4.2 -3.8 A 19 -17 A N-Channel -Pulsed a b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C 2.0 W TA=70°C 1.28 W -55 to 150 °C 62.5 °C/W THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Jul,31,2008 1 www.samhop.com.tw STM8300 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=24V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V V 1 uA ±100 nA 1.6 3 V ON CHARACTERISTICS VDS=VGS , ID=250uA VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge VGS=10V , ID=5.3A 38 46 m ohm VGS=4.5V , ID=4.5A 48 65 m ohm VDS=5V , ID=5.3A 10 S 310 pF 73 pF 44 pF VDD=15V ID=1A VGS=10V RGEN=6 ohm 7.5 ns 9.5 ns 16 13 ns ns VDS=15V,ID=5.3A,VGS=10V 5.3 2.8 0.9 1.2 nC nC c COSS tD(OFF) 1 VDS=15V,VGS=0V f=1.0MHz c VDS=15V,ID=5.3A,VGS=4.5V VDS=15V,ID=5.3A, VGS=10V Gate-Drain Charge nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b VGS=0V,IS=1A 0.79 1 A 1.2 V Jul,31,2008 2 www.samhop.com.tw STM8300 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Min VGS=0V , ID=-250uA -30 Typ -1 ±100 VGS= ±20V , VDS=0V -1.0 -1.8 -3.0 uA nA 46 56 V m ohm VGS=-4.5V , ID=-3.7A 68 90 m ohm VDS=-5V , ID=-4.7A 7.5 S 520 125 pF pF pF VDS=-15V,VGS=0V f=1.0MHz 78 c Diode Forward Voltage b ns ns ns ns VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm 7.5 12.4 VDS=-15V,ID=-4.7A,VGS=-10V 10.3 nC VDS=-15V,ID=-4.7A,VGS=-4.5V 5.2 1.1 2.8 nC VDS=-15V,ID=-4.7A, VGS=-10V 62 37 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Units V VDS=-24V , VGS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-4.7A Max c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions VGS=0V,IS=-1A -0.77 nC nC -1 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Jul,31,2008 3 www.samhop.com.tw STM8300 Ver 1.0 N-Channel 15 25 VG S =4.5V VG S =10V VG S =4V I D, Drain Current(A) I D, Drain Current(A) 20 VG S =3.5V 15 10 VG S =3V 5 VG S =2.5V 12 9 25 C 6 T j=125 C 3 -55 C 0 0 0.5 1 2 1.5 2.5 0 0.0 3 V DS, Drain-to-Source Voltage(V) 3.5 2.8 4.2 2.0 R DS(on), On-Resistance Normalized 65 V G S =4.5V RDS(on)(m Ω) 2.1 Figure 2. Transfer Characteristics 78 52 39 V G S =10V 26 13 1 5 10 15 20 1.8 V GS =4.5V I D =4.5A 1.6 1.4 1.2 V GS =10V I D =5.3A 1.0 0.8 25 0 25 75 50 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.4 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 0 0.7 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 -55 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 1.10 I D =250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,31,2008 4 www.samhop.com.tw STM8300 Ver 1.0 20 90 Is, Source-drain current(A) I D =5.3A RDS(on)(m Ω) 75 T J = 125 C 60 45 25 C 75 C 30 15 0 0 2 4 6 8 75 C T J = 125 C 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 25 C 1.0 0 10 600 400 Ciss 300 200 Coss 100 Crss 0 0 5 10 15 20 25 VDS=15V ID=5.3A 8 6 4 2 0 30 0 4 5 6 7 Figure 9. Capacitance Figure 10. Gate Charge 70 100 60 10 T D(off) Tr Tf 10 T D(on) V DS =15V ,ID=1A 6 10 RD Rg, Gate Resistance(Ω) )L im 8 it 10 1m 1 0.1 60 100 300 600 ON S( 10 0.1 V G S =10V 1 3 2 Qg, Total Gate Charge(nC) 250 1 1 V DS, Drain-to-Source Voltage(V) I D, Drain Current(A) Switching Time(ns) 10 DC 0u s s 10 ms 0m s V G S =10V S ingle P ulse T A =25 C 1 10 30 50 V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,31,2008 5 www.samhop.com.tw STM8300 Ver 1.0 V ( BR )D S S 15V tp L VDS D R IVE R D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 100 1000 Jul,31,2008 6 www.samhop.com.tw STM8300 Ver 1.0 P-Channel 15 15 VGS=4V VGS=10V -I D, Drain Current(A) -I D, Drain Current(A) 12 VGS=3.5V 9 6 VGS=3V 3 12 9 125 C 6 25 C 3 -55 C 0 0 0 0.5 1 1.5 2 2.5 0 3 -V DS, Drain-to-Source Voltage(V) 100 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 V G S =-4.5V 60 V G S =-10V 20 1 1 3 6 9 12 3.6 4.5 5.4 VGS=-4.5V ID=-3.7A 1.3 VGS=-10V ID=-4.7A 1.2 1.1 1.0 0 15 0 50 25 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 Vth, Normalized Gate-Source Threshold Voltage 2.7 Figure 2. Transfer Characteristics 120 40 1.8 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 80 0.9 VDS=VGS ID=-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.3 I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,31,2008 7 www.samhop.com.tw STM8300 Ver 1.0 120 20.0 -Is, Source-drain current(A) I D= - 4 . 7 A R DS(on)(m Ω) 100 80 125 C 60 75 C 25 C 40 20 0 2 0 4 8 6 10.0 125 C 25 C 75 C 1.0 10 0 -VGS, Gate-to-Source Voltage(V) 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 900 750 C, Capacitance(pF) 0.6 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 Ciss 450 300 Coss 150 Crss 0 0 5 10 15 20 25 V DS= - 1 5 V I D= - 4 . 7 A 8 6 4 2 0 30 0 2 4 6 8 10 12 14 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 16 70 100 60 T D(off) -ID, Drain Current(A) 250 Switching Time(ns) 0.3 Tr Tf 10 T D(on) V D S = -15V,I D=-1A 1 6 10 R 0.1 60 100 300 600 Rg, Gate Resistance(Ω) (O DS N) L im it 10 1m 1 0.1 V G S = -10 V 1 10 DC 10 1 0 ms 0m s 0u s s V G S =10V S ingle P ulse T A =25 C 1 10 30 50 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jul,31,2008 8 www.samhop.com.tw STM8300 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM 0.05 0.1 t1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Jul,31,2008 9 www.samhop.com.tw STM8300 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Jul,31,2008 10 www.samhop.com.tw STM8300 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 H ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Jul,31,2008 11 www.samhop.com.tw