MICROSEMI APTC90DDA12T1G

APTC90DDA12T1G
Dual boost chopper
Super Junction MOSFET
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 30A @ Tc = 25°C
Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
•
•
•
•
Pins 3/4 must be shorted together
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
• RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
30
23
75
±20
120
250
8.8
2.9
1940
Unit
V
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTC90DDA12T1G – Rev 0
Symbol
VDSS
APTC90DDA12T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
2.5
500
100
3
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
VGS = 10V, ID = 26A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
Max
100
Unit
120
3.5
100
mΩ
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
6.8
0.33
nF
270
VGS = 10V
VBus = 400V
ID = 26A
nC
32
115
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
20
ns
400
25
1.5
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
mJ
0.75
2.1
mJ
0.85
Chopper diode ratings and characteristics
IF
VF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 800V
di/dt=200A/µs
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Min
1200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
30
2.6
3.2
1.8
Tj = 25°C
300
Tj = 125°C
380
Tj = 25°C
360
Tj = 125°C
1700
Unit
V
µA
A
3.1
V
August, 2009
IRM
Test Conditions
ns
nC
2–6
APTC90DDA12T1G – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTC90DDA12T1G
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
CoolMOS
diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.50
1.2
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTC90DDA12T1G – Rev 0
August, 2009
SP1 Package outline (dimensions in mm)
APTC90DDA12T1G
Typical CoolMOS performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
6V
80
5V
40
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
Maximum Safe Operating Area
925
900
25
limited by RDSon
75
100
125
10
10 ms
Single pulse
TJ=150°C
TC=25°C
25
20
15
10
5
0.1
0
10
100
1000
25
VDS, Drain to Source Voltage (V)
Ciss
10000
1000
Coss
100
10
Crss
1
0
150
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
50
75
100
125
TC, Case Temperature (°C)
10
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
www.microsemi.com
VDS=400V
ID=26A
TJ=25°C
8
August, 2009
1
C, Capacitance (pF)
50
30
ID, DC Drain Current (A)
ID, Drain Current (A)
950
DC Drain Current vs Case Temperature
35
100 µs
1
975
TJ, Junction Temperature (°C)
1000
100
1000
6
4
2
0
0
50
100 150 200
Gate Charge (nC)
250
300
4–6
APTC90DDA12T1G – Rev 0
ID, Drain Current (A)
VGS=20, 8V
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
120
APTC90DDA12T1G
ZVS
150
100
ZCS
50
Hard
switching
0
10
12.5
15
17.5
20
22.5
25
3.0
2.5
2.0
1.5
1.0
0.5
25
3
100
125
150
4
Switching Energy (mJ)
Eon
2
Eoff
1
0
Eon
3
Eoff
2
VDS=600V
ID=26A
TJ=125°C
L=100µH
1
0
5
10
15
20
25
30
ID, Drain Current (A)
35
40
5
10
15
20
25
30
35
Gate Resistance (Ohms)
August, 2009
Eon and Eoff (mJ)
VDS=600V
RG=7.5Ω
TJ=125°C
L=100µH
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
50
TJ, Junction Temperature (°C)
ID, Drain Current (A)
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5–6
APTC90DDA12T1G – Rev 0
Frequency (kHz)
VDS=600V
D=50%
RG=7.5Ω
TJ=125°C
TC=75°C
200
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
250
APTC90DDA12T1G
Typical Chopper diode performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
TJ=125°C
60
40
20
TJ=25°C
0
0.0
1.0
2.0
500
trr, Reverse Recovery Time (ns)
3.0
TJ=125°C
VR=800V
400
300
45 A
200
30 A
15 A
100
0
0
4.0
200
TJ=125°C
VR=800V
45 A
3
30 A
2
15 A
1
0
0
200
400
600
800
1000 1200
30 A
TJ=125°C
VR=800V
25
15 A
20
45 A
15
10
5
0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
160
Duty Cycle = 0.5
TJ=175°C
40
IF(AV) (A)
120
80
30
20
10
40
August, 2009
C, Capacitance (pF)
800 1000 1200
30
-diF/dt (A/µs)
200
600
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
4
400
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
0
0
1
10
100
VR, Reverse Voltage (V)
1000
25
50
75
100
125
150
175
Case Temperature (ºC)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTC90DDA12T1G – Rev 0
IF, Forward Current (A)
80