S T M9926 S amHop Microelectronics C orp. J an. 10 2008 ver1.0 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. S urface Mount P ackage. E S D P rotected. 28 @ V G S = 4.0V 6.5A 38 @ V G S = 2.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 10 V P arameter Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed ID 6.5 A IDM 30 A Drain-S ource Diode Forward C urrent a IS 1.7 A Maximum P ower Dissipation a PD 2 W T J , T S TG -55 to 150 C R JA 62.5 C /W Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T M9926 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 10V,V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.9 1.5 V Drain-S ource On-S tate R esistance R DS (ON) V GS = 4.0V, ID = 6.5A 23 28 m ohm V GS = 2.5V, ID = 5A 30 38 m ohm V DS = 5.0V, ID = 6.5A 16 S 540 PF 160 PF 100 PF 15 ns 20 ns 36 ns 11 ns V DS =10V, ID =6.5A,V GS =4V 6.4 nC V DS =10V, ID =6.5A,V GS =2.5V 4.6 nC 1.1 nC 2.8 nC OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b gFS Forward Transconductance 0.5 DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GE N = 10 ohm V DS =10V, ID = 6.5 A V GS =4V 2 S T M9926 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.7A VSD 0.72 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 V G S =8V V G S =3V 12 V G S =2.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =2V 12 8 4 V G S =1.5V 0 0 0.5 1.5 1.0 2.0 2.5 9 6 T j=125 C 3 25 C 0 0.0 3.0 V DS , Drain-to-S ource Voltage (V ) 0.8 1.2 1.6 2.0 2.4 F igure 2. Trans fer C haracteris tics 60 R DS (ON) , On-R es is tance Normalized 1.5 50 R DS (on) (m W) 0.4 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 40 V G S =2.5V 30 20 V G S =4V 10 1 -55 C 1 4 8 12 16 1.4 1.2 1.1 V G S =2.5V I D =5A 1.0 0 20 V G S =4V I D =6.5A 1.3 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.4 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 60 I D =6.5A Is , S ource-drain current (A) 50 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M9926 40 25 C 30 20 125 C 75 C 10 0 0 1 2 4 6 5.0 25 C 75 C 1.0 8 V G S , G ate-S ource Voltage (V ) 125 C 10.0 0 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M9926 V G S , G ate to S ource V oltage (V ) 600 C is s C , C apacitance (pF ) 500 6 400 300 C os s 200 C rs s 100 5 V DS =10V I D =6.5A 4 3 2 1 0 0 0 2 4 8 6 10 0 12 1 4 5 6 7 8 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 600 Tr 100 60 TD(off) I D , Drain C urrent (A) S witching T ime (ns ) 3 2 TD(on) Tf 10 V DS =10V ,ID=1A 1 30 10 R 60 100 300 600 im it 10 10 0m ms s DC 1 0.1 0.03 6 10 )L 1s V G S =4.5V 1 D ON S( V G S =10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( W) 1 10 60 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 Single Pulse 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M9926 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° INC HE S MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° 6 MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M9926 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 7 ψ12.75 + 0.15 2.0 ±0.15