S T S 4501 S amHop Microelectronics C orp. Oc t. 12,2007 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID F E AT UR E S S uper high dense cell design for low R DS (ON ). R DS (ON) ( m Ω ) Max R ugged and reliable. 65 @ V G S = -10V -40V -3.5A S OT-23 P ackage. 85 @ V G S = -4.5V D S OT-23 D G S G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS - 40 V Gate-S ource Voltage V GS 20 V Drain C urrent-C ontinuous @ T J =25 C b -P ulsed ID -3.5 A IDM - 14 A Drain-S ource Diode Forward C urrent IS -1.25 A Maximum P ower Dissipation a PD 1.25 W Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 100 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T S 4501 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -32V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA V GS (th) V DS = V GS , ID = -250uA ON CHAR ACTE R IS TICS -40 V uA a Gate Threshold Voltage Drain-S ource On-S tate R esistance R DS (ON) Forward Transconductance DYNAMIC CHAR ACTE R IS TICS -3 V V GS =-10V, ID = -3.5A 54 65 m ohm V GS =-4.5V, ID= -2A 70 85 m ohm V DS = -5V, V GS = -10V ID(ON) gFS On-S tate Drain Current -1.6 -1 -20 A 8.7 S 660 PF 100 PF 60 PF 10.5 ns 11 ns 72 ns 22 ns V DS =-28V, ID =-3.5A,V GS =-10V 13 nC V DS =-28V, ID =-3.5A,V GS =-4.5V 6.5 nC 1.4 nC nC V DS = -10V, ID =-3.5A b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS V DS =-25V, V GS = 0V f =1.0MH Z SWITCHING CHAR ACTER ISTICS b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = -20V ID = -1A V GS = -10V R GE N = 3.3 ohm V DS =-28V, ID = -3.5 A V GS =-10V 2 3.8 S T S 4501 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is = -1.25A VSD -0.75 -1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 15 V G S =-10V -55 C 12 12 -I D , Drain C urrent (A) -I D , Drain C urrent(A) V G S =-4V V G S =-4.5V 9 V G S =-3.5V 6 V G S =-3V 3 V G S =-2.5V 0 9 6 T j=125 C 3 0 0 0.5 1 2 1.5 2.5 3 25 C 0 -V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 120 R DS (ON) , On-R es is tance Normalized 1.5 100 R DS (on) (m Ω) 1.6 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 80 V G S =-4.5V 60 V G S =-10V 40 20 0 0.8 1 3 6 9 12 1.4 1.3 1.2 1.1 V G S =-10V I D =-3.5A 1.0 0.0 15 V G S =-4.5V I D =-2A 0 25 50 75 100 125 150 T j( C ) -I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 150 20.0 I D =-3.5A -Is , S ource-drain current (A) 125 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T S 4501 100 125 C 75 50 25 C 75 C 25 0 25 C 10.0 75 C 125 C 1.0 0 2 4 6 8 10 0.4 -V G S , G ate- S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T S 4501 10 C, Capacitance (pF) 750 -VGS, Gate to Source Voltage (V) 900 Ciss 600 450 300 Coss 150 Crss VDS=-28V ID=-3.5A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 2 -VDS, Drain-to Source Voltage (V) 4 6 8 10 12 14 16 Qg, Total Gate Charge (nC) Figure 10. Capacitance 20 -I D , Drain C urrent (A) Switching Time (ns) 400 TD(off ) 100 60 Tr Tf TD(on) 10 VDS=-20V,ID=-1A 1 VGS=-10V 1 6 10 10 RD )L im it 0.1 DC 1s 0m ms s V G S =-10V S ingle P ulse T c=25 C 0.1 300 600 10 10 1 0.03 60 100 ON S( 1 Rg, Gate Resistance (Ω) 30 50 10 -VDS, Drain-Source Voltage (V) Figure 13. Maximum Safe Operating Area Figure 12.switching characteristics Therma l R esis tanc e Norm aliz ed Transien t 10 1 0.5 0.2 0. 1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.0000 1 1. 2. 3. 4. 0.000 1 0.001 0.01 0. 1 1 Square Wave Puls e D uration(sec) Normalized Therma l T ransient Impedanc e C urve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 4501 A M F G L J B C I H E D (TYP.) F 3/81 4/21 3/51 3/91 1/217 1/1:5 1/221 2/51 2/71 1/166 1/174 1/46 1/61 1/125 1/131 1 1/21 1 1/115 1/56 1/66 1/133 1/129 1/186!SFG/ 2/11 1/21 2/41 1/31 1/14: 1/115 2/:1!SFG/ G I 1/233 1/162 1/119 J L 1/51 . 1/127 1/56 2/26 1/144 1/156 M 1± 21± 1± 21± 6 . S T S 4501 SOT-23 Tape and Reel Data SOT-23 Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT-23 A0 3.20 ²0.10 B0 3.00 ²0.10 K0 D0 1.33 ²0.10 О1.00 +0.25 E D1 О1.50 +0.10 8.00 +0.30 -0.10 E1 E2 P0 P1 P2 T 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.20 ²0.02 SOT-23 Reel UNIT:р TAPE SIZE REEL SIZE M N W W1 H K S G R V 8р О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 5.00 18.00 7