S T U408D S amHop Microelectronics C orp. J uly.25 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 10V 40V TO252-4L package. E S D P rotected. 16A 40 @ V G S =4.5V D2 D1 D1/D2 G1 S1 G1 S2 TO-252-4L G2 S1 G2 N-ch S2 N-ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 16 13.8 A A IDM 50 A IS 8 A P arameter 25 C Drain C urrent-C ontinuous @ Ta -P ulsed ID 70 C a Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange 11 7.7 W T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 13.6 C /W Thermal R esistance, Junction-to-Ambient R JA 120 C /W THE R MAL C HAR AC TE R IS TIC S 1 S T U408D E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.8 3.0 V R DS (ON) V GS = 10V, ID = 8A 22 30 m-ohm Drain-S ource On-S tate R esistance V GS = 4.5V, ID = 6A 30 40 m-ohm OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V V DS = 5V, ID =8A 1 10 A 15 S 735 PF 120 PF 70 PF 13 ns 15 ns 26 ns DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =20V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) V DD = 20V, ID = 3A, V GS = 10V, R GE N = 3 ohm Fall Time Total Gate Charge (10V) tf 10 ns Qg 15 nC Total Gate Charge (4.5V) Qg 7.2 nC Gate-S ource Charge Q gs 2.0 nC Gate-Drain Charge Q gd 3.8 nC V DS =20V, ID = 8A, V GS =10V 2 S T U408D E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.94 V GS = 0V, Is = 8A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 15 30 V G S =4.5V 12 V G S =3.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 25 20 V G S =10V V G S =8V 15 10 V G S =3V 5 0 9 T j=125 C 6 25 C 3 -55 C 0 0 0.5 1 2 1.5 2.5 3 0 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics F igure 1. Output C haracteris tics 2.0 R DS (ON) , On-R es is tance Normalized 60 50 R DS (on) (m W) 1.6 V G S , G ate-to-S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) 40 V G S =4.5V 30 20 V G S =10V 10 0 0.8 1 6 12 18 24 1.8 1.4 1.2 V G S =4.5V I D =6A 1.0 0.0 30 V G S =10V I D =8A 1.6 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 4. On-R es is tance Variation with Drain C urrent and Temperature F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 T j, J unction T emperature ( C ) 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 20.0 I D =8A 50 125 C Is , S ource-drain current (A) R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U408D 40 75 C 30 25 C 20 10 0 0 10.0 25 C 75 C 125 C 1.0 2 4 6 8 10 0.4 V G S , G ate- S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U408D V G S , G ate to S ource V oltage (V ) 1200 C is s 800 600 400 C os s 200 C rs s 0 0 V DS =20V I D =8A 8 6 4 2 0 5 10 15 20 25 30 0 2 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 100 300 80 100 60 I D , Drain C urrent (A) Tr S witching T ime (ns ) 6 4 V DS , Drain-to S ource Voltage (V ) T D(off) T D(on) Tf 10 V DS =20V ,ID=1A 1 V G S =10V 1 R DS ( ) ON L im it 1m 10 1s DC 1 0.5 0.1 60 100 300 600 6 10 10 10 0m s ms s V G S =10V S ingle P ulse T c=25 C 1 R g, G ate R es is tance ( W) 10 30 V DS , Drain-S ource V oltage (V ) 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 60 F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1000 10 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U408D P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H K C M J L D S G P REF . Millimeters MIN MAX A 6.40 6.80 B 5.2 5.50 C 6.80 10.20 D 2.20 3.00 1.27 REF. P S 0.50 0.80 G 0.40 0.60 H 2.20 2.40 J 0.45 0.60 K 0 0.15 L 0.90 1.50 M 5.40 5.80 6 S T U408D TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape 6 4 TO-252-4L Reel UNIT:㎜ 7