S T U/D600S S amHop Microelectronics C orp. Aug 25,2006 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 55 @ V G S = 10V 60V 16A TO-252 and TO-251 P ackage. 70 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) S ymbol Limit Unit Drain-S ource Voltage V DS 60 V Gate-S ource Voltage V GS 20 V P arameter 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a 10.7 IDM 30 A IS 15 A Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange 16 A A ID PD 50 35 W T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W THE R MAL C HAR AC TE R IS TIC S S T U/D600S N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 48V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 60 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.8 3.0 V GS =10V, ID = 8A 45 55 m ohm V GS =4.5V, ID= 4A 50 70 V DS = 5V, V GS = 10V 1.0 20 V m ohm A 16 S 670 PF 72 PF 45 PF 3.2 ohm 13 ns 10 ns 25 ns 9 ns V DS =30V, ID =8A,V GS =10V 14.2 nC V DS =30V, ID =8A,V GS =4.5V 7 nC 1.7 nC 3.8 nC V DS = 10V, ID =8A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =30V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 30V ID = 8 A V GS = 10V R GE N = 3.3 ohm V DS =30V, ID = 8A V GS =10V 2 S T U/D600S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage V GS = 0V, Is = 10A VSD 0.9 1.3 V Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 20 V G S =4.5V V G S =10V 16 V G S =8V I D , Drain C urrent (A) ID , Drain C urrent(A) 24 V G S =3.5V 18 12 V G S =3V 6 0 0 25 C 12 8 4 T j=125 C 0 0.5 1 2 1.5 2.5 3 -55 C 0 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.8 4.0 F igure 2. Trans fer C haracteris tics 120 2.0 R DS (ON) , On-R es is tance Normalized 100 R DS (on) (m W) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 80 V G S =4.5V 60 40 V G S =10V 20 1 0.8 1 6 12 18 24 1.8 1.4 1.2 V G S =10V I D =8A 1.0 0.0 30 V G S =4.5V I D =4A 1.6 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 144 20.0 I D =8A Is , S ource-drain current (A) 120 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D600S 96 125 C 72 48 75 C 25 C 24 0 0 2 4 6 8 25 C 75 C 1.0 0.2 10 V G S , G ate- S ource Voltage (V ) 125 C 10.0 0.4 0.6 0.8 1.0 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D600S V G S , G ate to S ource V oltage (V ) 1200 800 C is s 600 400 C os s 200 0 C rs s 0 V DS =30V I D =8A 8 6 4 2 0 5 10 15 20 25 30 0 2 V DS , Drain-to S ource Voltage (V ) 8 6 10 12 14 16 F igure 10. G ate C harge 220 60 100 60 T D(off) I D , Drain C urrent (A) S witching T ime (ns ) 4 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance Tr T D(on) Tf 10 V DS =30V ,ID=8A 1 10 R (O N) L im it 10 DC 10m 0m s s 1s V G S =10V S ingle P ulse T A =25 C 0.1 0.03 60 100 300 600 6 10 DS 1 V G S =10V 1 0.1 1 R g, G ate R es is tance ( W) 10 60 V DS , Drain-S ource V oltage (V ) 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 80 F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1000 10 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 S T U/D600S 6 S T U/D600S 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 7 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D600S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M ψ330 ± 0.5 N W ψ97 ± 1.0 17.0 + 1.5 - 0 T H K S 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 8 G R V