SANKEN FKP252

MOSFET
FKP252
December. 2005
■Package---TO220F
■Features
• Low on-resistance
• Low input capacitance
• Avalanche energy capability guaranteed
■Applications
• PDP driving
• High speed switching
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±25A
A
±100A
A
40 (Tc=25°C)
W
200
mJ
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
ID(pulse)
*1
PD
EAS
*2
Avalanche Current
IAS
25
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
*1 PW≤100μsec, duty cycle≤1%
*2 VDD=20V, L=590μH, ILp=25A, unclamped, RG=50Ω, See Fig.1
.
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T02-003EA-051206
MOSFET
FKP252
December. 2005
Electrical characteristics
(Ta=25°C)
Test Conditions
Limits
Unit
Characteristic
Symbol
Drain to Source breakdown Voltage
V(BR)DSS
Gate to Source Leakage Current
IGSS
VGS=±30V
±100
nA
Drain to Source Leakage Current
IDSS
VDS=250V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
3.0
4.5
V
Forward Transconductance
Re(Yfs)
VDS=10V, ID=12A
13
Static Drain to Source On-Resistance
RDS(ON)
ID=12A, VGS=10V
Input Capacitance
Ciss
VDS=25V
2000
Output Capacitance
Coss
VGS=0V
330
Reverse Transfer Capacitance
Crss
f=1MHz
70
Turn-On Delay Time
td(on)
ID=12A, VDD≈120V
30
Rise Time
tr
RL=10Ω, VGS=10V
50
Turn-Off Delay Time
td(off)
Rg=5Ω
100
Fall Time
tf
See Fig.2
40
Source-Drain Diode Forward Voltage
VSD
ISD=25A,VGS=0V
0.9
Gate Threshold Voltage Temp.
ΔVTH
Coefficient
/ ΔTch
VDS=10V, ID=1mA
-8
ID=100μA,VGS=0V
MIN.
TYP.
MAX.
250
V
21
68
S
75
mΩ
pF
ns
1.5
V
mV/°C
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MOSFET
FKP252
December. 2005
Characteristic Curves
ID-VDS Characteristics (typical)
ID-VGS Characteristics (typical)
VDS=10V
VGS=10
25
(Tc=25°C)
25
6.0
20
20
5.5
15
ID (A)
ID (A)
15
10
10
5.0
Tc=-55℃
5
Tc= 25℃
5
Tc=125℃
0
0
0
2
4
6
8
10
0
2
4
VDS (V)
6
8
10
VGS (V)
RDS(on)-ID Characteristics (typical)
VDS-VGS Characteristics (typical)
VGS=10V
0.12
4
0.10
3
VDS (V)
0.06
2
ID=25A
0.04
1
ID=12A
0.02
0.00
0
0
5
10
15
20
25
1
10
VGS (V)
ID (A)
RDS(on) -Tc Characteristics (typical)
100
ID=12A
VGS=10V
0.20
RDS(on) (Ω)
RDS(on) (Ω)
0.08
0.10
0.00
-100
-50
0
50
100
150
Tc (℃)
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MOSFET
FKP252
December. 2005
Characteristic Curves
(Tc=25°C)
Capacitance-VDS Characteristics (typical)
Re(yfs)-ID Characteristics (typical)
f=1MHz
VGS=0V
VDS=10V
100
10000
Ciss
1000
Tc=-55℃
1
Capacitacnce (pF)
Re(yfs) (S)
10
Tc= 25℃
Tc=125℃
0.1
Cos
100
Crs
0.01
0.01
0.1
1
ID (A)
10
100
IDR-VSD Characteristics (typical)
10
25
0
10
20
30
40
50
VDS (V)
20
SAFE OPERATING AREA
1000
IDR (A)
15
ID(pulse) max
100
10
ID max
100μs(1shot)
10V
10
VGS=0V
ID [A]
5
RDS(on) LIMITED
1
0
0.0
0.2
0.4
0.6
VSD (V)
0.8
1.0
1.2
1ms (1shot)
Tc=25℃
P D-Ta C ha r a ct er ist ics
0.1
50
DC OPERATION
0.01
40
0.1
1
10
VDS [V]
100
1000
With infinite heatsink
PD (W)
30
20
10
Without heatsink
0
0
50
100
150
Ta (℃)
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MOSFET
FKP252
December. 2005
Fig.1 Unclamped Inductive Test Method (for Avalanche energy capability)
EAS=
L
V(BR)DSS
1
•L•ILP2•
2
V(BR)DSS − VDD
V(BR)DSS
IL
VDS
ILp
RG
VDS
VDD
VGS
IL
VDD
0V
(a) Test Circuit
Fig.2
(b) Waveforms
Switching Time Test Method
RL
VDD≈120V
ID
ID=12A
VDS
RG
RL=10Ω
VDD
VGS
VGS=10V
RG=5Ω
0V
P.W.=10μs
Duty cycle≦1%
(a) Test Circuit
90%
VGS
10%
90%
VDS
10%
td(on)
tr
td(off)
ton
tf
toff
(b) Output waveforms
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MOSFET
FKP252
December. 2005
External Dimensions
FM20 (TO220 Full Mold)
Measured between at the root
of leads and at the backside
Measured at the root
(1)
Measured at the root
(2)
(3)
Front view
Side view
Mass: Approx. 2g
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MOSFET
FKP252
December. 2005
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
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MOSFET
FKP252
December. 2005
Europe
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK
Tel: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-853-3353
Allegro MicroSystems, Inc. (Southern California)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-460-7837
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MOSFET
FKP252
December. 2005
CAUTION / WARNING
●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
is assumed for inaccuracies.
● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify
that the information being relied upon is current.
● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of
the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,
intellectual property rights or any other rights of Sanken or any third party which may result from its use.
● When using the products herein, the applicability and suitability of such products for the intended purpose or object
shall be reviewed at the users’ responsibility.
● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of
semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk,
preventative measures including safety design of the equipment or systems against any possible injury, death, fires or
damages to the society due to device failure or malfunction.
● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic
equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety
devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your
specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely
high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly
prohibited.
● Anti radioactive ray design is not considered for the products listed herein.
● This publication shall not be reproduced in whole or in part without prior written approval from Sanken.
●This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these
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