SavantIC Semiconductor Product Specification 2N3196 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V -5 A 75 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N3196 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-1A -1.5 V VBE(on) Base-emitter on voltage IC=-5A ; VCE=-4V -2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.3A ; VCE=-4V 30 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 2 MIN TYP. MAX -60 UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N3196