SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N3791 VCBO Collector-base voltage -60 Open base 2N3792 VEBO V -80 2N3791 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2N3792 VCEO VALUE V -80 Open collector -7 V IC Collector current -10 A IB Base current -4 A PD Total Power Dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N3791 MIN TYP. MAX UNIT -60 V -80 V IC=-0.2A ;IB=0 2N3792 VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VBE(on)-1 Base-emitter on voltage IC=-5A ; VCE=-2V -1.8 V VBE(on)-2 Base-emitter on voltage IC=-10A ; VCE=-4V -4.0 V 2N3791 VCE=-60V; VBE(off)=-1.5V TC=150 -1.0 -5.0 mA 2N3792 VCE=-80V; VBE(off)=-1.5V TC=150 -1.0 -5.0 mA -5.0 mA ICEX Collector cut-off current IEBO Emitter cut-off current VEB=-7V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-2V 50 hFE-2 DC current gain IC=-3A ; VCE=-2V 30 Transition frequency IC=-0.5A;VCE=-10V 4 fT 2 180 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N3791 2N3792