SavantIC Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5050 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5051 Open emitter 150 2N5052 200 2N5050 125 2N5051 Emitter-base voltage UNIT 125 Open base 2N5052 VEBO VALUE 150 V V 200 Open collector 7 V 2 A 40 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT /W SavantIC Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5050 VCEO(SUS) Collector-emitter sustaining voltage 2N5051 MIN TYP. MAX UNIT 125 IC=0.1A ;IB=0 V 150 200 2N5052 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.5A 1.5 V Base-emitter on voltage IC=750mA ; VCE=5V 1.2 V 5.0 mA VBE ICEO Collector cut-off current 2N4910 VCE=125V; IB=0 2N4911 VCE=150V; IB=0 2N4912 VCE=200V; IB=0 ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=750mA ; VCE=5V Transition frequency IC=500mA;VCE=10V;f=1MHz fT 2 25 100 10 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N5050 2N5051 2N5052