SAVANTIC 2N5294

SavantIC Semiconductor
Product Specification
2N5294 2N5296 2N5298
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High power dissipation
APPLICATIONS
·Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2N5294
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N5296
Open emitter
Emitter-base voltage
60
2N5298
80
2N5294
70
2N5296
UNIT
80
Open base
2N5298
VEBO
VALUE
40
V
V
60
Open collector
7
V
IC
Collector current
4
A
IB
Base current
2
A
PT
Total power dissipation
36
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
3.47
/W
SavantIC Semiconductor
Product Specification
2N5294 2N5296 2N5298
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5294
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5296
VBE
Collector-emitter
saturation voltage
Base-emitter on voltage
IC=0.1A ;IB=0
Collector cut-off current
IEBO
Emitter cut-off current
hFE
fT
ton
toff
DC current gain
IC=1.0A;IB=0.1A
2N5298
IC=1.5A;IB=0.15A
2N5294
IC=0.5A ; VCE=4V
1.1
2N5296
IC=1.0A ; VCE=4V
1.3
2N5298
IC=1.5A ; VCE=4V
1.5
VCE=65V;VBE=1.5V
TC=150
VCE=35V;VBE=1.5V
TC=150
VCE=50V;RBE=100<
TC=150
0.5
3.0
2.0
5.0
0.5
2.0
2N5294/5298
2N5294
VEB=7V; IC=0
2N5296/5298
VEB=5V; IC=0
2N5294
IC=0.5A ; VCE=4V
2N5296
IC=1.0A ; VCE=4V
2N5298
Turn-off time
1.0
1.0
Transition frequency
Turn-on time
60
2N5296
2N5296
UNIT
V
40
IC=0.5A;IB=0.05A
Collector cut-off current
ICER
MAX
2N5294
2N5294/5298
ICEV
TYP.
70
2N5298
VCEsat
MIN
30
120
IC=1.5A ; VCE=4V
20
80
IC=0.2A ; VCE=4V
0.8
2N5294
IC=0.5A;IB=0.05A;VCC=30V
2N5296
IC=1.0A;IB=0.1A;VCC=30V
2N5298
IC=1.5A;IB=0.15A;VCC=30V
2N5294
IC=0.5A;IB=0.05A;VCC=30V
2N5296
IC=1.0A;IB=0.1A;VCC=30V
2N5298
IC=1.5A;IB=0.15A;VCC=30V
2
V
V
mA
mA
mA
MHz
5.0
µs
15
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5294 2N5296 2N5298
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3