SavantIC Semiconductor Product Specification 2N5427 2N5429 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5427 VCBO Collector-base voltage 80 Open base 2N5429 VEBO V 100 2N5427 Collector-emitter voltage Emitter-base voltage UNIT 80 Open emitter 2N5429 VCEO VALUE V 100 Open collector 6 V IC Collector current 7 A IB Base current 1 A PD Total power dissipation 40 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor Product Specification 2N5427 2N5429 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5427 MIN TYP. MAX UNIT 80 V IC=50mA ;IB=0 100 2N5429 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=0.7A 1.2 V VBE sat-1 Base-emitter saturation voltage IC=2A; IB=0.2A 1.2 V VBE sat-2 Base-emitter saturation voltage IC=7A ;IB=0.7A 2.0 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA 2N5427 ICEX Collector cut-off current VCE= 75V; VBE(off)=-1.5V TC=150 0.1 1.0 2N5429 VCE= 90V; VBE(off)=-1.5V TC=150 0.1 1.0 0.1 IEBO Emitter cut-off current VEB=6V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=2V 30 hFE-2 DC current gain IC=2A ; VCE=2V 30 hFE-3 DC current gain IC=5A ; VCE=2V 20 Transition frequency IC=0.5A ; VCE=10V;f=10MHz 20 fT 2 mA mA 120 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N5427 2N5429