SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS 2N5629 Open emitter 2N5630 2N5629 VALUE 100 UNIT V 120 Open base 100 V 120 2N5630 Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5629 MIN TYP. MAX UNIT 100 IC=0.2A ;IB=0 2N5630 V 120 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A 2.0 V Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA ICEO Collector cut-off current 1.0 mA VBEsat 2N5629 2N5630 VCE=50V; IB=0 VCE=60V; IB=0 ICEV Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150 1.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain 2N5629 25 100 20 80 IC=8A ; VCE=2V 2N5630 hFE-2 DC current gain IC=16A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V ;f=0.1MHz fT Transition frequency IC=1A ; VCE=20V 2 4 500 1.0 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3