SavantIC Semiconductor Product Specification 2N5739 2N5740 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5739 VCBO Collector-base voltage -60 Open base 2N5740 VEBO V -100 2N5739 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2N5740 VCEO VALUE V -100 Open collector -5 V IC Collector current -10 A ICM Collector current-peak -20 A IB Base current -4 A PC Collector power dissipation 20 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=100 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.56 UNIT /W SavantIC Semiconductor Product Specification 2N5739 2N5740 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5739 MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 2N5740 V -100 VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-2.5A -3.0 V Base-emitter saturation voltage IC=-10A ;IB=-2.5A -2.5 V VBE Base-emitter on voltage IC=-4A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150 -0.5 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-5A ; VCE=-5V 20 hFE-2 DC current gain IC=-10A ; VCE=-5V 4 Transition frequency IC=-0.5A ; VCE=-10V 10 VBEsat fT 2 80 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N5739 2N5740