SAVANTIC 2N5744

SavantIC Semiconductor
Product Specification
2N5743 2N5744
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5743
VCBO
Collector-base voltage
-60
Open base
2N5744
VEBO
V
-100
2N5743
Collector-emitter voltage
Emitter-base voltage
UNIT
-60
Open emitter
2N5744
VCEO
VALUE
V
-100
Open collector
-5
V
-20
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=100
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
SavantIC Semiconductor
Product Specification
2N5743 2N5744
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N5743
MIN
TYP.
MAX
UNIT
-60
IC=-0.2A ;IB=0
V
-100
2N5744
VCEsat-1
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-20A ;IB=-4A
-3.0
V
Base-emitter saturation voltage
IC=-10A; IB=-1A
-1.8
V
VBE
Base-emitter on voltage
IC=-10A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
-0.1
mA
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=150
-0.5
-5.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-10A ; VCE=-5V
20
hFE-2
DC current gain
IC=-20A ; VCE=-5V
10
Transition frequency
IC=-1A ; VCE=-10V
10
VBEsat
fT
2
80
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2N5743 2N5744