SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5881 VCBO Collector-base voltage 60 V Open base 80 2N5882 VEBO V 80 2N5881 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N5882 VCEO VALUE Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 5 A PD Total Power Dissipation 160 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5881 MIN TYP. MAX UNIT 60 V IC=0.2A ;IB=0 80 2N5882 VCEsat-1 Collector-emitter saturation voltage IC=7A;IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=3.75A 4.0 V Base-emitter saturation voltage IC=15A;IB=3.75A 2.5 V VBE Base-emitter on voltage IC=6A ; VCE=4V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 0.5 mA ICEO Collector cut-off current 1.0 mA VBEsat 2N5881 2N5882 VCE=30V; IB=0 VCE=40V; IB=0 ICEX Collector cut-off current VCE=ratedVCE; VBE=1.5V TC=150 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=2A ; VCE=4V 35 hFE-2 DC current gain IC=6A ; VCE=4V 20 hFE-3 DC current gain IC=15A ; VCE=4V 4 Trainsistion frequency IC=1A ; VCE=10V 4 fT 2 100 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3