SavantIC Semiconductor Product Specification 2N6102 2N6103 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 8 V 16 A 75 W IC Collector current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.67 /W SavantIC Semiconductor Product Specification 2N6102 2N6103 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCE(sat-1) Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCE(sat-2) Collector-emitter saturation voltage IC=16A;IB=3.2A 2.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=4V 1.3 V VBE-2 Base-emitter on voltage IC=16A ; VCE=4V 3.5 V ICBO Collector cut-off current VCB=Rated VCBO;IE=0 TC=150 0.5 2.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE-2 DC current gain IC=15A ; VCE=4V 5 Transition frequency IC=0.5A ; VCE=4V 0.8 fT CONDITIONS 2 MIN TYP. MAX 45 UNIT V 80 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3