SavantIC Semiconductor Product Specification 2N6121 2N6122 2N6123 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS ·For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6121 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6122 Open emitter Emitter-base voltage 60 2N6123 80 2N6121 45 2N6122 UNIT 45 Open base 2N6123 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A IB Base current 1 A PT Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 3.125 /W SavantIC Semiconductor Product Specification 2N6121 2N6122 2N6123 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6121 VCEO(SUS) Collector-emitter sustaining voltage 2N6122 MIN TYP. MAX UNIT 45 IC=0.1A ;IB=0 2N6123 V 60 80 VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=4.0A;IB=1.0A 1.4 V Base-emitter on voltage IC=1.5A ; VCE=2V 1.2 V VCE=45V;VBE=1.5V TC=125 VCE=60V;VBE=1.5V TC=125 VCE=80V;VBE=1.5V TC=125 0.1 2.0 0.1 2.0 0.1 2.0 mA 1.0 mA 1.0 mA VBE 2N6121 ICEX Collector cut-off current 2N6122 2N6123 ICEO IEBO Collector cut-off current 2N6121 VCE=45V;IB=0 2N6122 VCE=60V;IB=0 2N6123 VCE=80V;IB=0 Emitter cut-off current VEB=5V; IC=0 2N6121 hFE-1 DC current gain 2N6122 25 100 20 80 IC=1.5A ; VCE=2V 2N6123 2N6121 10 hFE-2 DC current gain 2N6122 IC=4A ; VCE=2V 2N6123 fT Transition frequency 7 IC=1A ; VCE=4V 2 2.5 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3