SavantIC Semiconductor Product Specification 2N6322 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 30 A IB Base current 10 A PD Total Power Dissipation 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.5 UNIT /W SavantIC Semiconductor Product Specification 2N6322 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdwon voltage IC=30mA ;IB=0 200 V V(BR)CBO Collector-base breakdwon voltage IC=2m A ;IE=0 300 V V(BR)EBO Emitter-base breakdwon voltage IE=2m A ;IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=20A ;IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=30A; IB=6A 3.0 V VBE Base-emitter on voltage IC=30A ; VCE=5V 2.5 V ICEO Collector cut-off current VCE=100V; IB=0 2.0 mA ICES Collector cut-off current VCE=300V; VBE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 20 µA hFE-1 DC current gain IC=5A ; VCE=5V 40 hFE-2 DC current gain IC=20A ; VCE=5V 12 hFE-3 DC current gain IC=30A ; VCE=5V 6 Transition frequency IC=1A ; VCE=10V 10 fT CONDITIONS 2 MIN TYP. MAX UNIT 150 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6322