SavantIC Semiconductor Product Specification 2N6354 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military and industrial equipment PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6.5 V IC Collector current 10 A ICM Collector current-peak 12 A IB Base current 5 A PD Total Power Dissipation 140 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2N6354 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 120 V V(BR)EBO Emitter-base breakdwon voltage IE=5m A ;IC=0 6.5 V VCEsat-1 Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VBE sat-1 Base-emitter saturation voltage IC=5A ;IB=0.5A 1.3 V VBE sat-2 Base-emitter saturation voltage IC=10A; IB=1A 2.0 V ICEO Collector cut-off current VCE=100V;VBE=0 TC=125 10 mA ICEV Collector cut-off current VCE=140V; IB=0 10 20 mA ICBO Collector cut-off current VCB=150V; IE=0 5 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=5A ; VCE=2V 20 150 hFE-2 DC current gain IC=10A ; VCE=2V 10 100 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 2 MIN TYP. MAX 300 UNIT pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6354