SavantIC Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS 2N6386 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6387 Open emitter Emitter-base voltage IC Collector current-DC 60 2N6388 80 2N6386 40 2N6387 UNIT 40 Open base 2N6388 VEBO VALUE 60 V V 80 Open collector 5 2N6386 8 2N6387/6388 10 V A ICM Collector current-Pulse IB Base current-DC PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 15 A 0.25 A 65 W SavantIC Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6386 VCEO(SUS) Collector-emitter sustaining voltage VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage IC=0.2A, IB=0 2N6387 Collector cut-off current 2N6386 IC=3A ,IB=6mA 2N6387/6388 IC=5A ,IB=10mA 2N6386 IC=8A ,IB=80mA 2N6387/6388 IC=10A ,IB=100mA 2N6386 IC=3A ; VCE=3V 2N6387/6388 IC=5A ; VCE=3V 2N6386 IC=8A ; VCE=3V 2N6387/6388 IC=10A ; VCE=3V Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 Cob UNIT V 60 VCB=40V, VBE=-1.5V TC=125 VCB=60V, VBE=-1.5V TC=125 VCB=80V, VBE=-1.5V TC=125 2N6387 2N6388 ICEO MAX 80 2N6386 ICBO TYP. 40 2N6388 VCEsat-1 MIN 2N6386 VCE=40V, IB=0 2N6387 VCE=60V, IB=0 2N6388 VCE=80V, IB=0 VEB=5V; IC=0 2N6386 IC=3A ; VCE=3V 2N6387/6388 IC=5A ; VCE=3V 2N6386 IC=8A ; VCE=3V 2N6387/6388 IC=10A ; VCE=3V 1000 DC current gain 2.0 V 3.0 V 2.8 V 4.5 V 0.3 3.0 0.3 3.0 0.3 3.0 mA 1.0 mA 5.0 mA 20000 100 Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.92 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6386 2N6387 2N6388