SAVANTIC 2N6465

SavantIC Semiconductor
Product Specification
2N6465 2N6466
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Complement to type 2N6467 2N6468
APPLICATIONS
·For use in audio amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N6465
VCBO
Collector-base voltage
100
Open base
2N6466
VEBO
V
130
2N6465
Collector-emitter voltage
Emitter-base voltage
UNIT
110
Open emitter
2N6466
VCEO
VALUE
V
120
Open collector
5
V
4
A
40
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6465 2N6466
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6465
VCEO(SUS)
Collector-emitter
sustaining voltage
VBE
ICEO
UNIT
V
120
Collector-emitter saturation voltage
IC=1.5A; IB=0.15A
1.2
V
Base-emitter on voltage
IC=1.5A ; VCE=4V
1.5
V
10
µA
100
µA
10
µA
VCB=110V; IE=0
Collector cut-off current
2N6466
VCB=130V; IE=0
2N6465
VCE= 100V,IB=0
Collector cut-off current
2N6466
VCE= 120V,IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1.5A ; VCE=4V
15
Transition frequency
IC=0.5A ; VCE=10V
5
fT
MAX
IC=50mA ;IB=0
2N6465
ICBO
TYP.
100
2N6466
VCEsat
MIN
2
150
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2N6465 2N6466