SavantIC Semiconductor Product Specification 2N6486 2N6487 2N6488 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Excellent safe operating area ·Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6486 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6487 Open emitter Emitter-base voltage 70 2N6488 90 2N6486 40 2N6487 UNIT 50 Open base 2N6488 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 15 A IB Base current 5 A PT Total power dissipation 75 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.67 /W SavantIC Semiconductor Product Specification 2N6486 2N6487 2N6488 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6486 VCEO(SUS) Collector-emitter sustaining voltage 2N6487 MIN TYP. MAX UNIT 40 IC=0.2A ;IB=0 V 60 80 2N6488 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=5A 3.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=4V 1.3 V VBE-2 Base-emitter on voltage IC=15A ; VCE=4V 3.5 V 2N6486 VCE=45V; VCE=40V;TC=150 0.5 5.0 2N6487 VCE=65V; VCE=60V;TC=150 0.5 5.0 2N6488 VCE=85V; VCE=80V;TC=150 0.5 5.0 2N6486 VCE=20V;IB=0 2N6487 VCE=30V;IB=0 2N6488 VCE=40V;IB=0 ICEX ICEO Collector cut-off current VBE=-1.5V Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=5A ; VCE=4V 20 hFE-2 DC current gain IC=15A ; VCE=4V 5 2 mA 1.0 mA 1.0 mA 150 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6486 2N6487 2N6488 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3