SAVANTIC 2N6494

SavantIC Semiconductor
Product Specification
2N6493
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·DARLINGTON
APPLICATIONS
·General-purpose power amplifier and
low frequency swithing applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
70
V
VEBO
Emitter-base voltage
Open collector
5
V
15
A
100
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6493
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=100mA
3
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=100mA
4
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
2.8
V
ICEO
Collector cut-off current
VCE=50V; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE=100V; VBE(off)=-1.5V
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE-1
DC current gain
IC=4A ; VCE=4V
500
hFE-2
DC current gain
IC=15A ; VCE=4V
100
2
MIN
TYP.
MAX
70
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N6493