SavantIC Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wideband amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V 10 A 70 W IC Collector current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 4.37 /W SavantIC Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.0 V VBE Base -emitter on voltage IC=10A ; VCE=3V 2.8 V ICEV Collector cut-off current VCE=150V;VBE(off)=-1.5V TC=150 0.1 1.0 mA ICEO Collector cut-off current VCE=40V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=10A ; VCE=3V Transition frequency IC=1 A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX 80 UNIT V 10 60 25 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6495