SavantIC Semiconductor Product Specification 2N6686 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For power supplies and other high-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 260 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 25 A ICM Collector current-peak 50 A IB Base current 8 A PC Collector power dissipation 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification 2N6686 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=25A; IB=2.5A 1.5 V VBEsat Base-emitter saturation voltage IC=25A; IB=2.5A 1.8 V ICEV Collector cut-off current VCE=260V; VBE=-1.5V 50 µA IEBO Emitter cut-off current VEB=8V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=2V 30 hFE-2 DC current gain IC=10A ; VCE=2V 25 hFE-3 DC current gain IC=25A ; VCE=2V 15 Transition frequency IC=1A ; VCE=10V 20 fT CONDITIONS 2 MIN TYP. MAX 160 UNIT V 100 100 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N6686