SAVANTIC 2SA1067

SavantIC Semiconductor
Product Specification
2SA1067
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·For audio and general purpose
amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
ICM
Collector current-peak
-14
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
2SA1067
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-3A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
2
MIN
TYP.
MAX
-120
UNIT
V
60
150
50
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SA1067