SavantIC Semiconductor Product Specification 2SA1292 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Low saturation voltage. ·Fast switching time. ·Complement to type 2SC3256 APPLICATIONS ·Various inductance, lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A ICM Collector current-peak -20 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA1292 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -80 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V Collector-emitter saturation voltage IC=-7.5A; IB=-0.375A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 µA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V VCEsat fT 70 280 100 MHz 0.1 µs 0.5 µs 0.1 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=-6A IB1=- IB2=-0.3A VCC=-20V;RL=3.3B hFE Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SA1292