SavantIC Semiconductor Product Specification 2SA1328 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3345 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A IB Base current -2 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA1328 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.3A -0.15 -0.4 V VBEsat Base-emitter saturation voltage IC=-6A; IB=-0.3A -0.9 -1.2 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 µA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-6A ; VCE=-1V 40 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 320 pF fT Transition frequency IC=-1A ; VCE=-5V 70 MHz 0.3 µs 1.0 µs 0.5 µs -50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=- IB2=-0.3A RL=5A;VCC=-30V hFE-1 Classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SA1328 SavantIC Semiconductor Product Specification 2SA1328 Silicon PNP Power Transistors 4