SAVANTIC 2SA1383

SavantIC Semiconductor
Product Specification
2SA1383
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3514
·High transition frequency
APPLICATIONS
·Designed for use in audio frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-180
V
VEBO
Emitter-base voltage
Open collector
-5
V
-0.1
A
IC
Collector current
PC
Collector power dissipation
Ta=25
1.5
W
TC=25
10
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA1383
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,IB=0
VCEsat
Collector-emitter saturation voltage
IC=-50mA; IB=-5mA
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-50mA; IB=-5mA
-1.5
V
ICBO
Collector cut-off current
VCB=-180V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
µA
hFE-1
DC current gain
IC=-1mA ; VCE=-5V
90
hFE-2
DC current gain
IC=-10mA ; VCE=-5V
100
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
4.5
pF
fT
Transition frequency
IC=-20mA ; VCE=-10V
180
MHz
hFE-2 Classifications
Q
P
100-200
160-320
2
MIN
TYP.
MAX
-180
UNIT
V
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SA1383