SavantIC Semiconductor Product Specification 2SA653 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·High voltage: VCEO=-120V(min) APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V -1.0 A 15 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA653 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V VBEsat Base-emitter saturation voltage IC=-0.5A; IB=-50mA -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE DC current gain IC=-0.2A ; VCE=-5V Transition frequency IC=-0.1A ; VCE=-10V fT CONDITIONS 2 MIN TYP. MAX UNIT 40 15 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SA653