SAVANTIC 2SA757

SavantIC Semiconductor
Product Specification
2SA757
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SC897
APPLICATIONS
·For audio amplifier power output
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-7
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA757
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;RBE=9
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ,IE=0
-120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-5A; IB=-1A
-1.8
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
25
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
hFE-1 Classifications
A
B
C
25-60
50-120
100-200
2
MIN
TYP.
MAX
UNIT
200
24
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SA757