SavantIC Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SA770 VCBO Collector-base voltage -60 Open base 2SA771 VEBO Emitter-base voltage V -80 2SA770 Collector-emitter voltage UNIT -60 Open emitter 2SA771 VCEO VALUE V -80 Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA770 MAX 2SA771 2SA770 2SA771 UNIT -60 V -80 IC=-3A; IB=-0.3A -1.0 V -1.0 mA -1.0 mA VCB=-60V; IE=0 VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-1A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT TYP. IC=-25mA ,IB=0 Collector-emitter saturation voltage Collector cut-off current MIN 40 10 MHz 0.9 µs 1.0 µs 0.1 µs Switching times tr tstg tf Rise time Storage time IC=-3A ; VCC=-9V IB1=-IB2=-0.4A;RL=3C Fall time 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3