SavantIC Semiconductor Product Specification 2SB1022 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1417 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V -7 A -0.2 A IC Collector current IB Base current PC Collector power dissipation Ta=25 2.0 W TC=25 30 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1022 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-14mA -2.0 V Base-emitter saturation voltage IC=-3A ;IB=-6mA -2.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 2000 hFE-2 DC current gain IC=-7A ; VCE=-3V 1000 VBEsat CONDITIONS MIN TYP. MAX -60 UNIT V 15000 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=-6mA; VCC>-45V RL=15? Fall time 2 0.8 µs 2.0 µs 2.5 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1022